| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
144 pcs
|
144 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request | |
|
50 pcs
|
50 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| SVHC Present | |
| Storage Temperature | |
| Tape & Reel |
The Infineon IPP040N06N is an N-channel OptiMOSTM power transistor optimized for high-performance switched-mode power supplies (SMPS), particularly for synchronous rectification applications.
Key electrical characteristics include a drain-source breakdown voltage of 60V and a continuous drain current of 80A at 25°C case temperature. The device features a low on-state resistance (RDS(on)) of typically 3.6 mΩ at 10V gate-source voltage and 80A drain current, and 4.7 mΩ at 6V gate-source voltage and 20A drain current. It also offers a gate threshold voltage typically around 2.8V.
Thermal performance is supported by a junction-to-case thermal resistance of 1.4 K/W. The operating and storage temperature range is -55°C to 175°C. The transistor is packaged in a PG-TO220-3 package suitable for through-hole mounting.
This MOSFET is 100% avalanche tested and qualified according to JEDEC standards for target applications. It features Pb-free lead plating and is RoHS compliant, as well as Halogen-free according to IEC61249-2-21.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.93 | $2.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V.
The typical gate threshold voltage is 2.8V.
The maximum continuous drain current is 80A.
The typical drain-source on-state resistance is 3.6 mΩ.
The package type is PG-TO220-3.
The operating temperature range is -55°C to 175°C.
The IPP040N06N is RoHS3 Compliant.