| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,020 pcs
|
3020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Infineon IPP034NE7N3GXKSA1 is an N-Channel enhancement mode power MOSFET built with advanced OptiMOS technology. It is designed for high-efficiency power conversion and switching applications.
Key electrical characteristics include a drain-source voltage (Vds) of 75V, a continuous drain current (Id) of 100A at 25°C case temperature, and a maximum on-resistance (Rds(on)) of just 3.4mOhm at Vgs=10V and Id=100A. The gate threshold voltage (Vgs(th)) is a maximum of 3.8V at 155µA drain current. The device can handle a maximum power dissipation of 214W at 25°C case temperature.
The MOSFET is housed in a standard TO-220-3 through-hole package (supplier package PG-TO220-3), suitable for easy mounting on heatsinks. It operates over a junction temperature range of -55°C to +175°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.67 | $3.67 |
| 10+ | $2.39 | $2.39 |
| 50+ | $1.84 | $1.84 |
| 100+ | $1.67 | $1.67 |
| 500+ | $1.36 | $1.36 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (Vds) is 75V.
The continuous drain current (Id) is 100A at 25°C case temperature.
The maximum on-resistance (Rds(on)) is 3.4mOhm at Vgs=10V and Id=100A.
It comes in a TO-220-3 through-hole package (PG-TO220-3).
The junction temperature range is -55°C to +175°C.
Yes, it is listed as RoHS3 compliant.