Mfr Part #:

IPP032N06N3GXKSA1

N-Channel MOSFET from Infineon with 60V drain-source voltage and 120A continuous drain current. Housed in a through-hole TO-220-3 package (PG-TO220-3).

✓ Total Stock: 32,020 pcs

$ Price Range: $0.61 - $2.17

IPP032N06N3GXKSA1 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	32,020 pcs On Request	32020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPP032N06N3GXKSA1 Description

Short technical summary and product information.

The IPP032N06N3GXKSA1 is an N-Channel power MOSFET manufactured by Infineon Technologies. It features a maximum drain-to-source voltage of 60V and a continuous drain current of 120A at case temperature. The device offers a low on-resistance of 3.2mOhm at 10V gate drive, enabling high-efficiency power conversion.

This MOSFET is designed for switching applications and is rated for a power dissipation of 188W. It has a typical gate charge of 165nC and an input capacitance of 13000pF at 30V drain-source voltage. The gate threshold voltage is 4V at 118µA drain current. The operating junction temperature range is -55°C to 175°C.

The component is supplied in a through-hole TO-220-3 package (supplier package PG-TO220-3), suitable for PCB mounting with standard lead spacing. It meets RoHS, REACH, and MSL Level 1 compliance requirements.

Infineon's OptiMOS technology family is employed in this device, offering optimized performance for demanding power management applications.

IPP032N06N3GXKSA1 Quick Information

Product Type: MOSFET

Series: OptiMOS 3

Canonical Name: Infineon IPP032N06N3GXKSA1 N-Channel MOSFET, 60V, 120A, TO-220-3

Subcategory: N-Channel Power MOSFET

IPP032N06N3GXKSA1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPP032N06N3GXKSA1 Estimated Pricing

Qty	Low	High
1+	$2.17	$2.17
10+	$1.05	$1.05
100+	$0.94	$0.94
500+	$0.82	$0.82
5,000+	$0.61	$0.61

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPP032N06N3GXKSA1 Features

N-Channel power MOSFET with 60V drain-source voltage.
120A continuous drain current capability.
Low on-resistance of 3.2mOhm for high efficiency.
Through-hole TO-220-3 package for easy mounting.
Wide operating temperature range -55°C to 175°C.

IPP032N06N3GXKSA1 Applications

Suitable for DC-DC converter designs.
Used in motor control circuits.
Ideal for high-current power supplies.
Applicable in battery management systems.

IPP032N06N3GXKSA1 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-to-source voltage of the IPP032N06N3GXKSA1?

60V.

What is the maximum continuous drain current?

120A at case temperature.

What is the package type?

TO-220-3 (PG-TO220-3).

What is the operating temperature range?

-55°C to 175°C (junction).

Is this component RoHS compliant?

Yes, it is listed as RoHS3 Compliant.

What is the on-resistance at 10V gate drive?

3.2mOhm at 100A, 10V.

What is the gate threshold voltage?

4V at 118µA drain current.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	120 A (Tc)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	13000 pF @ 30 V
Lead Style	Through Hole
Mounting Type	Through Hole
Operating Temperature	-55°C to 175°C (TJ)
Power Dissipation (Max)	188 W (Tc)
Rds On (Max) @ Id, Vgs	3.2 mOhm @ 100A, 10V
SVHC Present	Not Present
Supplier Device Package	PG-TO220-3
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	4 V @ 118 µA