| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,480 pcs
|
3480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
125 pcs
|
125 pcs | On Request | 1 | On Request | On Request | 1812+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type | |
| Package / Case | |
| Power Dissipation |
The Infineon IPP030N10N5 is an N-Channel enhancement mode power MOSFET designed for high efficiency power conversion. It features a maximum drain-source voltage of 100V and a continuous drain current of 120A at TC=25°C, with a maximum on-resistance of 3 mOhm at VGS=10V and ID=120A.
Key electrical characteristics include a gate-source voltage range of ±20V, a maximum power dissipation of 250W at TC=25°C, and a pulsed drain current capability of 480A. The device offers an avalanche energy rating of 502 mJ (ID=100A, RGS=25Ω). Typical gate charge is 112 nC and output charge is 142 nC.
The MOSFET is housed in a TO-220-3 package with through-hole mounting, suitable for standard PCB assembly. It is lead-free (Pb-free plating) and halogen-free, compliant with environmental standards.
With its low on-resistance and high current capability, the IPP030N10N5 is suitable for applications such as power supplies, motor drives, and DC-DC converters. Its operation temperature ranges from -55°C to 175°C.
100 V.
TO-220-3.
-55°C to 175°C.
Yes, it has Pb-free plating (confirmed from datasheet).
Yes, halogen-free per datasheet.
3 mOhm maximum at VGS=10V, ID=120A.
120 A at TC=25°C.