IPP030N10N3GXKSA1 N-Channel power MOSFET from Infineon with 100V drain-source breakdown voltage, 100A continuous drain current, and a maximum on-resistance of 3mΩ at 10V gate drive. Offered in a TO-220-3 through-hole package.
Mfr Part #:

IPP030N10N3GXKSA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-Channel power MOSFET from Infineon with 100V drain-source breakdown voltage, 100A continuous drain current, and a maximum on-resistance of 3mΩ at 10V gate drive. Offered in a TO-220-3 through-hole package.
✓ Total Stock: 4,520 pcs
$ Price Range: $2.58 - $6.25

IPP030N10N3GXKSA1 Available from 1 distributor

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✓ Non-Authorised
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IPP030N10N3GXKSA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Industrial Grade
Input Capacitance (Ciss) (Max) @ Vds
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPP030N10N3GXKSA1 Description

Short technical summary and product information.

The IPP030N10N3GXKSA1 is an N-channel power MOSFET from Infineon Technologies, part of the OptiMOS 3 family. It is rated for a drain-source voltage of 100V and a continuous drain current of 100A at both 25°C and 100°C case temperatures. The device features a low maximum on-state resistance of 3mΩ at Vgs=10V and a typical value of 2.6mΩ.

 

The MOSFET has a total gate charge of 155nC typical (206nC maximum) and an input capacitance of 11100pF typical (14800pF maximum). These parameters make it suitable for high-frequency switching and synchronous rectification, as noted in the datasheet. The device can handle pulsed drain currents up to 400A and dissipates up to 300W at 25°C case temperature.

 

The junction-to-case thermal resistance is 0.5K/W, and the operating junction temperature range is -55°C to 175°C. The IPP030N10N3GXKSA1 is offered in a PG-TO220-3 through-hole package. The product is RoHS compliant with Pb-free lead plating.

IPP030N10N3GXKSA1 Quick Information

Product Type: Power MOSFET
Series: 3
Canonical Name: IPP030N10N3GXKSA1 N-Channel 100V 100A Power MOSFET
Subcategory: Single N-Channel MOSFET

IPP030N10N3GXKSA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IPP030N10N3GXKSA1 Estimated Pricing

Qty Low High
1+ $6.25 $6.25
10+ $3.30 $3.30
100+ $2.99 $2.99
500+ $2.58 $2.58

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPP030N10N3GXKSA1 Features

  • N-channel MOSFET rated at 100V.
  • Continuous drain current up to 100A.
  • Low maximum on-resistance of 3mΩ.
  • Low gate charge for fast switching.
  • Through-hole TO-220-3 package for easy mounting.

IPP030N10N3GXKSA1 Applications

  • Designed for high-frequency switching circuits.
  • Ideal for synchronous rectification applications.

IPP030N10N3GXKSA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the IPP030N10N3GXKSA1?

The drain-source breakdown voltage is 100V minimum.

What is the continuous drain current rating?

The continuous drain current is 100A at Tc=25°C and also 100A at Tc=100°C.

What is the on-resistance of this MOSFET?

The drain-source on-state resistance is 2.6mΩ typical and 3mΩ maximum at Vgs=10V, Id=100A.

What is the operating temperature range?

The operating junction temperature range is -55°C to 175°C.

What is the package type?

The package is TO-220-3 (PG-TO220-3) through-hole.

Is this MOSFET RoHS compliant?

Yes, the datasheet states RoHS compliant and Pb-free lead plating.

What is the total gate charge?

Total gate charge is 155nC typical and 206nC maximum at Vgs=10V.

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