| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
460 pcs
|
460 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| SVHC Present |
The Infineon Technologies IPP029N06N is an N-channel OptiMOSTM power transistor with a drain-source voltage rating of 60V. It is optimized for high-performance switched-mode power supplies (SMPS), particularly for synchronous rectification.
Key electrical characteristics include a maximum on-resistance of 2.9 mΩ at a gate-source voltage of 10V and a continuous drain current of 100A at 25°C case temperature. The device is 100% avalanche tested and features superior thermal resistance.
This MOSFET is supplied in a PG-TO220-3 package, suitable for through-hole mounting. It is Pb-free and halogen-free, compliant with RoHS and IEC61249-2-21 standards. The operating temperature range is -55°C to 175°C.
Applications include high-performance SMPS and synchronous rectification. The device is qualified according to JEDEC standards for target applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 60V.
The continuous drain current (ID) is 100A at TC=25°C with VGS=10V.
The maximum on-resistance (RDS(on)) is 2.9mΩ at VGS=10V and ID=100A.
It is housed in a PG-TO220-3 through-hole package.
The operating and storage temperature range is -55°C to 175°C.
The maximum power dissipation is 136W at TC=25°C.