Mfr Part #:

IPP027N08N5AKSA1

N-Channel MOSFET from Infineon Technologies, rated for 80V drain-source voltage and 120A continuous drain current. Features low on-resistance of 2.7mΩ and is housed in a TO-220-3 through-hole package.

✓ Total Stock: 8,020 pcs

$ Price Range: $1.57 - $1.67

IPP027N08N5AKSA1 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	8,020 pcs On Request	8020 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPP027N08N5AKSA1 Description

Short technical summary and product information.

The IPP027N08N5AKSA1 is an N-channel enhancement mode MOSFET from Infineon's OptiMOS 5 family. It is designed for high-frequency switching and synchronous rectification applications. Key electrical characteristics include a maximum drain-source voltage of 80V, continuous drain current of 120A at Tc=25°C, and a typical on-resistance of 2.7mΩ at VGS=10V. The device offers a typical gate charge of 99nC and output charge of 116nC, enabling efficient switching performance. Input capacitance is 8970pF at VDS=40V, and single pulse avalanche energy is rated at 374mJ. Maximum power dissipation is 214W at Tc=25°C. The operating junction temperature range is -55°C to 175°C. The MOSFET is housed in a TO-220-3 through-hole package with Pb-free plating and is RoHS compliant and halogen-free per IEC61249-2-21.

IPP027N08N5AKSA1 Quick Information

Product Type: N-Channel MOSFET

Series: 5

Canonical Name: Infineon Technologies IPP027N08N5AKSA1 N-Channel MOSFET, 80V, 120A, TO-220-3

Subcategory: N-Channel MOSFET

IPP027N08N5AKSA1 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): MSL Level 1 - Unlimited

REACH Status: REACH Unaffected

Lead Free: Yes

IPP027N08N5AKSA1 Estimated Pricing

Qty	Low	High
500+	$1.67	$1.67
1,000+	$1.65	$1.65
2,500+	$1.57	$1.57

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPP027N08N5AKSA1 Features

N-channel MOSFET with 80V drain-source voltage.
Continuous drain current rating of 120A.
Low on-resistance of 2.7mΩ typical.
Optimized for high-frequency switching applications.
RoHS compliant and halogen-free.

IPP027N08N5AKSA1 Applications

Ideal for high frequency switching power supplies.
Used in synchronous rectification circuits.
Suitable for DC-DC converter designs.
Applicable in motor control systems.

IPP027N08N5AKSA1 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage?

80 V.

What package is the IPP027N08N5AKSA1 available in?

TO-220-3 (through-hole).

What is the operating temperature range?

-55°C to 175°C.

Is the IPP027N08N5AKSA1 RoHS compliant?

Yes, RoHS3 compliant and Pb-free plating.

What is the continuous drain current rating?

120 A at Tc = 25°C.

What is the typical on-resistance?

2.7 mΩ at VGS = 10V, ID = 100A.

What is the typical gate charge?

99 nC at VGS = 10V.

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Infineon Technologies
Current	120 A @ Tc = 25 °C
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	99 nC (typ), 123 nC (max)
Halogen Free	Yes
Input Capacitance (Ciss) (Max) @ Vds	8970 pF @ 40 V
Mounting Type	Through Hole
Number of Pins	3
Operating Temperature	-55 °C to 175 °C
Power Dissipation (Max)	214 W @ Tc = 25 °C
Rds On (Max) @ Id, Vgs	2.7 mΩ @ 100 A, 10 V
Storage Temperature	-55°C ~ 175°C
Supplier Device Package	PG-TO220-3
Tape & Reel	No
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20 V
Vgs(th) (Max) @ Id	3.8 V @ 154 µA