| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,500 pcs
|
7500 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
2,500 pcs
|
2500 pcs | On Request | 1 | On Request | On Request | 18+ | On Request | On Request | |
|
960 pcs
|
960 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type | |
| Power Dissipation |
The Infineon IPP023N08N5 is an N-channel MOSFET from the OptiMOS™5 family, designed for high-frequency switching applications. It features a maximum drain-source voltage (VDS) of 80V and a very low on-resistance (RDS(on)) of 2.3 mΩ at a gate-source voltage (VGS) of 10V and a drain current (ID) of 100A.
This MOSFET is rated for a continuous drain current of 120A at 25°C case temperature and 120A at 100°C case temperature. It also has a pulsed drain current capability of 480A and an avalanche energy rating (EAS) of 674 mJ.
The IPP023N08N5 is supplied in a PG-TO220-3 package, suitable for through-hole mounting. It is Pb-free and halogen-free, compliant with RoHS and IEC61249-2-21 standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 80V.
The maximum on-resistance is 2.3 mΩ.
The continuous drain current is 120A at 25°C and 120A at 100°C.
The IPP023N08N5 is available in a PG-TO220-3 package.
Yes, the IPP023N08N5 is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
Yes, the IPP023N08N5 is Halogen-free.