IPP016N08NF2SAKMA1 N-channel power MOSFET from Infineon with 80V drain-source voltage, 196A continuous drain current, and 1.6mΩ maximum on-resistance. Available in a TO-220-3 package.
Mfr Part #:

IPP016N08NF2SAKMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
N-channel power MOSFET from Infineon with 80V drain-source voltage, 196A continuous drain current, and 1.6mΩ maximum on-resistance. Available in a TO-220-3 package.
✓ Total Stock: 2,020 pcs
$ Price Range: $1.63 - $4.44

IPP016N08NF2SAKMA1 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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2,020 pcs
2020 pcs On Request 1 On Request On Request On Request On Request On Request

IPP016N08NF2SAKMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

IPP016N08NF2SAKMA1 Description

Short technical summary and product information.

IPP016N08NF2SAKMA1 is an N-channel power MOSFET from Infineon Technologies, part of the StrongIRFET 2 family. It is designed for high-current switching applications and provides a drain-to-source voltage rating of 80 V, continuous drain current of 196 A at 25°C case temperature, and a maximum on-resistance of 1.6 mΩ at 10 V gate drive.

 

The device features a maximum gate charge of 255 nC at Vgs = 10 V and input capacitance of 12000 pF at Vds = 40 V. It is 100% avalanche tested with a single-pulse avalanche energy rating of 1125 mJ. Maximum power dissipation is 300 W at Tc = 25°C, with an operating junction temperature range of -55°C to 175°C.

 

The IPP016N08NF2SAKMA1 is supplied in a TO-220-3 through-hole package (supplier device package PG-TO220-3). It uses normal-level gate drive with recommended drive voltages of 6 V and 10 V. The part is RoHS compliant and halogen-free according to IEC61249-2-21.

IPP016N08NF2SAKMA1 Quick Information

Product Type: Power MOSFET
Series: StrongIRFET2
Canonical Name: Single N-Channel Power MOSFET
Subcategory: Single FETs, MOSFETs

IPP016N08NF2SAKMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

IPP016N08NF2SAKMA1 Estimated Pricing

Qty Low High
1+ $4.44 $4.44
10+ $2.27 $2.27
100+ $2.06 $2.06
500+ $1.69 $1.69
1,000+ $1.63 $1.63

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPP016N08NF2SAKMA1 Features

  • N-channel 80V power MOSFET transistor.
  • 196A continuous drain current rating.
  • Very low 1.6mΩ maximum on-resistance.
  • Available in through-hole TO-220-3 package.
  • Meets RoHS and halogen-free requirements.

IPP016N08NF2SAKMA1 Applications

  • High-current DC-DC converter switching stages.
  • Motor drive and power supply circuits.
  • Battery protection and power management.
  • Used in synchronous rectification circuits.

IPP016N08NF2SAKMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage of the IPP016N08NF2SAKMA1?

The maximum drain-to-source voltage (Vdss) is 80 V.

What package does this MOSFET use?

It uses a TO-220-3 through-hole package, with supplier device package PG-TO220-3.

What is the operating temperature range?

The junction operating temperature range is -55°C to 175°C.

Is the IPP016N08NF2SAKMA1 RoHS compliant?

Yes, the datasheet indicates RoHS3 compliance and Pb-free lead plating. It is also halogen-free according to IEC61249-2-21.

What is the maximum continuous drain current?

The maximum continuous drain current is 196 A at Tc=25°C with Vgs=10V, and 35 A at Ta=25°C.

What is the on-resistance of this MOSFET?

The maximum drain-source on-resistance is 1.6 mΩ at Id=100A and Vgs=10V.

What is the maximum power dissipation for this device?

Maximum power dissipation is 300 W at Tc=25°C and 3.8 W at Ta=25°C.

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