Mfr Part #:

IPN95R3K7P7

Mfr Name: Infineon

The Infineon IPN95R3K7P7 is a 950V N-channel CoolMOS P7 SJ power MOSFET in a PG-SOT223 package. It offers best-in-class performance with low Rds(on) and integrated ESD protection.

✓ Total Stock: 3,235 pcs

IPN95R3K7P7 Available from 1 distributor

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✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	3,235 pcs On Request	3235 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPN95R3K7P7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Gate Charge	6nC
Lead Style	Gull Wing
SVHC Present	Not Present
Tape & Reel	Yes

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IPN95R3K7P7 Description

Short technical summary and product information.

The Infineon IPN95R3K7P7 is a 950V N-channel power MOSFET from the CoolMOS P7 series, built on superjunction technology. This device sets a new benchmark in 950V superjunction technologies, combining high performance with ease of use.

Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 950V at 25°C, a maximum On-Resistance (Rds(on)) of 3.7Ω, a typical Gate Charge (Qg) of 6nC, and a typical Gate Threshold Voltage (Vgs(th)) of 3V. It also features an output capacitance energy (Eoss) of 0.5µJ at 500V and an ESD class (HBM) of 1C.

This MOSFET is housed in a PG-SOT223 package, suitable for surface mounting. It is recommended for flyback topologies in applications such as LED lighting, low-power chargers and adapters, smart meters, and auxiliary power supplies. It is also suitable for PFC stages in consumer and solar applications.

The product is fully qualified according to JEDEC standards for industrial applications, ensuring reliability and performance in demanding environments. The integrated Zener diode provides ESD protection, contributing to better production yield by reducing ESD-related failures.

IPN95R3K7P7 Quick Information

Product Type: N-Channel Power MOSFET

Series: CoolMOS P7 SJ

Canonical Name: Infineon IPN95R3K7P7 N-Channel Power MOSFET

Subcategory: N-Channel Power MOSFET

IPN95R3K7P7 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPN95R3K7P7 Features

950V Drain-Source Voltage rating.
3.7Ω maximum On-Resistance.
6nC typical Gate Charge.
PG-SOT223 package for surface mounting.
Integrated Zener Diode ESD protection.

IPN95R3K7P7 Applications

Recommended for flyback topologies.
Suitable for LED lighting applications.
Used in low-power chargers and adapters.
Applicable for smart meter power supplies.
Ideal for PFC stages in consumer electronics.

IPN95R3K7P7 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the IPN95R3K7P7?

The maximum drain-source voltage is 950V at Tj=25°C.

What is the continuous drain current rating?

The continuous drain current is 2A.

What is the on-resistance of this MOSFET?

The maximum on-resistance is 3.7Ω.

What is the typical gate charge?

The typical gate charge is 6nC.

What is the gate threshold voltage?

The typical gate threshold voltage is 3V.

What is the output capacitance at 500V?

The output capacitance is 0.5µJ at 500V.

What is the package type?

The package is PG-SOT223.