| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,340 pcs
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2340 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The Infineon IPN80R4K5P7 is an 800V CoolMOS P7 series N-channel power MOSFET. This transistor is designed for hard and soft switching flyback topologies, making it suitable for applications such as LED lighting, low power chargers and adapters, audio power, AUX power, and industrial power supplies. It is also applicable for PFC stages in consumer applications and solar power systems.
Key electrical characteristics include a maximum drain-source voltage of 800V at 25°C, a maximum on-resistance of 4.5Ω, and a typical gate charge of 4nC. The device features a typical gate-source threshold voltage of 3V and includes integrated Zener diode ESD protection. The MOSFET is housed in a PG-SOT223 package and is surface mountable.
This series sets a new benchmark in 800V super junction technologies, combining high performance with ease of use. Benefits include enabling higher power density designs, BOM savings, and lower assembly costs. The MOSFET is fully qualified according to JEDEC for industrial applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 800V at Tj=25°C.
The maximum on-resistance is 4.5Ω.
The continuous drain current is 1.5A.
The typical gate charge is 4nC.
It is available in a PG-SOT223 surface-mount package.
The ESD class is 1C (HBM).
The typical gate-source threshold voltage is 3V.