IPN70R600P7SATMA1 The Infineon IPN70R600P7SATMA1 is an N-Channel MOSFET designed for high voltage applications. It offers a 700V drain-to-source voltage and 8.5A continuous drain current.
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IPN70R600P7SATMA1

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IPN70R600P7SATMA1 is an N-Channel MOSFET designed for high voltage applications. It offers a 700V drain-to-source voltage and 8.5A continuous drain current.
✓ Total Stock: 1,000 pcs
$ Price Range: $0.99

IPN70R600P7SATMA1 Available from 1 distributor

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IPN70R600P7SATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package

IPN70R600P7SATMA1 Description

Short technical summary and product information.

The Infineon IPN70R600P7SATMA1 is a high-performance N-Channel MOSFET belonging to the CoolMOS P7 series. It is designed for applications requiring high voltage capability, featuring a maximum drain-to-source voltage (Vdss) of 700V and a continuous drain current (Id) of 8.5A at 25°C.

 

Key electrical characteristics include a maximum drain-source on-resistance (Rds On) of 600mOhm at 1.8A and 10V gate-source voltage, a maximum gate-source threshold voltage (Vgs(th)) of 3.5V at 90µA, and a maximum gate charge (Qg) of 10.5nC at 10V. The input capacitance (Ciss) is rated at a maximum of 364pF at 400V.

 

This MOSFET has a maximum power dissipation of 6.9W and operates within a temperature range of -40°C to 150°C (TJ). It is housed in a surface-mount PG-SOT223 package, also known as TO-261-3, making it suitable for compact designs.

 

The Infineon IPN70R600P7SATMA1 is specified with RoHS3 compliance and an MSL rating of 1. Its robust design and specifications make it suitable for various power switching applications.

IPN70R600P7SATMA1 Quick Information

Product Type: MOSFET
Series: CoolMOS P7
Canonical Name: Infineon IPN70R600P7SATMA1 N-Channel MOSFET
Subcategory: FETs, MOSFETs - Single

IPN70R600P7SATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPN70R600P7SATMA1 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPN70R600P7SATMA1 Features

  • N-Channel MOSFET with 700V drain-source voltage.
  • Continuous drain current of 8.5A at 25°C.
  • Low on-resistance: 600mOhm max at 1.8A, 10V.
  • Surface mount SOT223 package for compact designs.
  • Operating temperature range of -40°C to 150°C.

IPN70R600P7SATMA1 Applications

  • Suitable for high voltage power switching.
  • Designed for efficient power conversion.
  • Used in power supply circuits.
  • Ideal for motor control applications.

IPN70R600P7SATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the IPN70R600P7SATMA1?

The maximum drain-to-source voltage (Vdss) is 700V.

What is the continuous drain current at 25°C?

The continuous drain current (Id) at 25°C is 8.5A.

What is the maximum Rds On for this MOSFET?

The maximum Rds On is 600mOhm when measured at 1.8A drain current and 10V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -40°C to 150°C.

What type of package is the IPN70R600P7SATMA1 in?

It is supplied in a PG-SOT223 package, also known as TO-261-3.

How is the RoHS status specified for this component?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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