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IPN70R600P7S The Infineon IPN70R600P7S is a 700V N-channel CoolMOS P7 power MOSFET. It is designed for cost-sensitive applications requiring high efficiency and power density.
Mfr Part #:

IPN70R600P7S

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IPN70R600P7S is a 700V N-channel CoolMOS P7 power MOSFET. It is designed for cost-sensitive applications requiring high efficiency and power density.
✓ Total Stock: 16,000 pcs
$ Price Range: $0.71

IPN70R600P7S Available from 1 distributor

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IPN70R600P7S Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Gate Charge
Industrial Grade
Medical Grade
Military Grade
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Tape & Reel
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IPN70R600P7S Description

Short technical summary and product information.

The Infineon IPN70R600P7S is a 700V N-channel power MOSFET utilizing Infineon's CoolMOS P7 technology. This technology is based on the superjunction principle, offering a revolutionary approach to high-voltage power MOSFETs.

 

The IPN70R600P7S is optimized for cost-sensitive consumer market applications such as chargers, adapters, and lighting. It provides the benefits of fast switching Superjunction MOSFETs with an excellent price/performance ratio and ease of use. Key features include extremely low losses due to low FOM, excellent thermal behavior, and integrated ESD protection.

 

This MOSFET is suitable for high power density designs and small form factors. It is recommended for Flyback topologies. The device comes in a PG-SOT223 package, designed for surface mount applications.

 

Key electrical characteristics include a maximum Drain-Source Voltage of 700V, a maximum On-Resistance of 0.6 Ohms, and a typical Gate Charge of 10.5 nC. The pulsed drain current is rated at 20.5A, and the output capacitance (Eoss) at 400V is 1.2 µJ. The typical Gate Threshold Voltage is 3V, and it has an ESD class of 2 (HBM).

IPN70R600P7S Quick Information

Product Type: MOSFET
Series: CoolMOS P7
Canonical Name: Infineon IPN70R600P7S N-channel Power MOSFET
Subcategory: N-Channel

IPN70R600P7S Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPN70R600P7S Estimated Pricing

Qty Low High
1+ $0.71 $0.71

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPN70R600P7S Features

  • 700V Drain-Source Voltage rating.
  • 0.6 Ohm maximum On-Resistance.
  • 10.5 nC typical Gate Charge.
  • PG-SOT223 surface mount package.
  • Integrated ESD protection diode.

IPN70R600P7S Applications

  • Ideal for charger and adapter designs.
  • Suitable for lighting applications.
  • Used in Flyback topologies.
  • Enables high power density designs.

IPN70R600P7S FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-Source Voltage for the IPN70R600P7S?

The maximum Drain-Source Voltage (Vds) at Tj=25°C is 700V.

What is the maximum On-Resistance of the IPN70R600P7S MOSFET?

The maximum On-Resistance (Rds(on)) is 0.6 Ohms.

What is the typical Gate Charge for the IPN70R600P7S?

The typical Gate Charge (Qg) is 10.5 nC.

What package type is the IPN70R600P7S MOSFET supplied in?

The IPN70R600P7S is supplied in a PG-SOT223 package.

What are the potential applications for the IPN70R600P7S?

This MOSFET is recommended for Flyback topologies used in Chargers, Adapters, and Lighting Applications.

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