BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPN70R360P7S is a 700V N-channel power MOSFET from the CoolMOS P7 series. This technology is designed for high-voltage power MOSFETs using the superjunction principle, optimized for cost-sensitive applications like chargers, adapters, and lighting.
Key electrical characteristics include a maximum Drain-Source Voltage (Vds) of 700V at 25°C, a maximum On-State Resistance (RDS(on)) of 0.36 Ohms, and a typical Gate-Source Charge (Qg) of 16.4 nC. It also features a pulse drain current (ID,pulse) of 34A and output capacitance (Eoss) of 1.8 µJ at 400V.
This MOSFET is designed for excellent thermal behavior and low switching losses. It includes integrated ESD protection and meets JEDEC standards for product validation. The device is suitable for applications requiring high efficiency and high power density, enabling slim designs.
The IPN70R360P7S comes in a PG-SOT223 package. It is recommended for Flyback topologies found in chargers, adapters, and lighting applications.
| Qty | Low | High |
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| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum Drain-Source Voltage (VDS) at Tj=25°C is 700V.
The maximum On-State Resistance (RDS(on)) is 0.36 Ohms.
The typical Gate-Source Charge (Qg) is 16.4 nC.
The IPN70R360P7S is supplied in the PG-SOT223 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.