| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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960 pcs
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960 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPN70R2K0P7S is a 700V N-channel power MOSFET from the CoolMOS P7 series. This technology is designed according to the superjunction principle, offering high efficiency and power density.
Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 700V at 25°C, a maximum On-State Resistance (Rds(on)) of 2.0Ω, and a typical Gate Charge (Qg) of 3.8nC. It also features a typical Gate-Source Threshold Voltage (Vgs(th)) of 3V and an output capacitance (Eoss) of 0.4µJ at 400V.
This MOSFET is packaged in a PG-SOT223 surface-mount package. It is recommended for Flyback topologies used in applications such as chargers, adapters, and lighting. The device provides benefits like cost-competitiveness, lower temperature operation, and high ESD ruggedness.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 700V at Tj=25°C.
The device is packaged in PG-SOT223 for surface mount.
Maximum on-state resistance is 2.0Ω.
Typical gate charge is 3.8nC.
Pulsed drain current is 5.7A.
ESD class is 1C (HBM).