| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,505 pcs
|
1505 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Lead Style | |
| Mounting Type |
The Infineon IPN60R3K4CE is a 650V CoolMOS CE power transistor designed for high-voltage applications. This MOSFET utilizes superjunction technology to achieve high efficiency and a good cost-performance ratio.
Key electrical characteristics include a maximum Drain-Source Voltage (Vds) of 650V, a maximum On-Resistance (Rds(on)) of 3.4 Ohms, and a typical Gate Charge (Qg) of 4.6 nC. It also features a pulsed drain current (Id,pulse) of 3.9A and an energy in output capacitance (Eoss) of 0.57 µJ at 400V.
The device is packaged in a PG-SOT-223 surface-mount package. It is Pb-free plated and uses a halogen-free mold compound, aligning with environmental standards.
Applications for the IPN60R3K4CE include adapters, chargers, and lighting solutions where high efficiency and reliability are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V.
3.4Ω.
4.6nC.
PG-SOT-223.
3.9A.
0.57µJ.
500A/µs.