| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,150 pcs
|
3150 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPN60R2K1CEATMA1 is an N-Channel Superjunction MOSFET from Infineon Technologies' CoolMOS CE family. It is designed for high-voltage power switching applications, offering a drain-source voltage rating of 600V (650V at maximum junction temperature) and a continuous drain current of 3.7A at 25°C case temperature.
Key electrical characteristics include a maximum on-resistance of 2.1Ω at 10V gate drive and 800mA drain current, a typical gate charge of 6.7nC, and an input capacitance of 140pF at 100V drain-source voltage. The device also features a low output capacitance energy of 0.76µJ at 400V and a high body diode commutation slew rate of 500A/µs, contributing to efficient switching performance.
The MOSFET is housed in a PG-SOT223 surface-mount package (TO-261-4 equivalent) and is qualified for standard grade applications. It is suitable for use in adapters, chargers, and lighting applications. The device is Pb-free plated and uses halogen-free mold compound, complying with RoHS requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.82 | $0.82 |
| 10+ | $0.51 | $0.51 |
| 100+ | $0.33 | $0.33 |
| 500+ | $0.25 | $0.25 |
| 1,000+ | $0.23 | $0.23 |
| 3,000+ | $0.19 | $0.19 |
| 6,000+ | $0.18 | $0.18 |
| 9,000+ | $0.16 | $0.16 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The device is housed in a PG-SOT223 surface-mount package (also known as TO-261-4).
The junction temperature range is -40°C to 150°C.
Yes, the device is RoHS3 compliant and features Pb-free plating.
The maximum drain-source voltage is 600V at 25°C and 650V at maximum junction temperature.
The continuous drain current is 3.7A at 25°C case temperature.
The maximum on-resistance is 2.1Ω at 10V gate drive and 800mA drain current.
The typical total gate charge is 6.7nC at 10V gate voltage.