| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Halogen Free | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPN60R1K0CEATMA1 is a high-voltage N-Channel power MOSFET built on Infineon's CoolMOS CE superjunction technology. It is rated for a maximum drain-source voltage of 600V (650V at maximum junction temperature) and a continuous drain current of 6.8A at Tc. The device features a typical on-resistance of 1Ω at 10V gate drive and a typical gate charge of 13nC. Input capacitance is 280pF at 100V drain-source voltage.
The MOSFET offers fast switching with a body diode commutation rating of 500A/µs. Output capacitance energy at 400V is 1.3µJ. It is designed for cost-sensitive applications in consumer and lighting markets, including adapters, chargers, and lighting circuits.
The IPN60R1K0CEATMA1 is packaged in a surface-mount PG-SOT223-3 package (TO-261-4, TO-261AA). It operates over a junction temperature range of -40°C to 150°C. The device is lead-free plated and uses halogen-free mold compound, and is listed as RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.02 | $1.02 |
| 10+ | $0.64 | $0.64 |
| 100+ | $0.41 | $0.41 |
| 500+ | $0.32 | $0.32 |
| 1,000+ | $0.29 | $0.29 |
| 3,000+ | $0.25 | $0.25 |
| 6,000+ | $0.23 | $0.23 |
| 9,000+ | $0.22 | $0.22 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
Maximum drain-source voltage is 600V, with a maximum rating of 650V at maximum junction temperature (Tj,max).
It is available in a surface-mount TO-261-4 (TO-261AA) package, also known as PG-SOT223-3.
The operating junction temperature range is -40°C to 150°C.
It is listed as RoHS3 Compliant, though this has not been independently verified. The datasheet confirms lead-free plating and halogen-free mold compound.
Typical gate charge is 13 nC at Vgs=10V.
Continuous drain current is 6.8A at Tc, and pulsed drain current is 11.8A.
Maximum on-resistance is 1Ω at Id=1.5A and Vgs=10V.