Mfr Part #:

IPLU300N04S4-R8

Mfr Name: Infineon

The Infineon IPLU300N04S4-R8 is an N-channel OptiMOS™-T2 power MOSFET designed for automotive applications. It offers a 40V drain-source breakdown voltage and a high continuous drain current capability.

✓ Total Stock: 8,073 pcs

$ Price Range: $2.93

IPLU300N04S4-R8 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	6,251 pcs On Request	6251 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Smaxon Electronics ✓ Non-Authorised Inventory information	1,782 pcs On Request	1782 pcs	On Request	1	On Request	On Request	18+	On Request	On Request
Bristol Electronics ✓ Non-Authorised Inventory information	40 pcs On Request	40 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPLU300N04S4-R8 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Mounting Type	Surface Mount
Power Dissipation	429 W
Reverse Recovery Time	85 ns
SVHC Present	Not Present

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IPLU300N04S4-R8 Description

Short technical summary and product information.

The Infineon IPLU300N04S4-R8 is an N-channel enhancement mode power MOSFET from the OptiMOS™-T2 family. It is AEC qualified and designed for demanding automotive applications such as electronic power steering (EPS) and battery management systems.

Key electrical characteristics include a drain-source breakdown voltage of 40V and a maximum on-state resistance (RDS(on)) of 0.77 mΩ at a gate-source voltage of 10V and a drain current of 100A. The device can handle a continuous drain current of 300A at 25°C case temperature and 300A at 100°C case temperature, with a pulsed drain current capability of up to 1200A.

With an operating temperature range of -55°C to +175°C and a junction-to-case thermal resistance of 0.35 K/W, this MOSFET is built for reliability. It features ultra-low RDS(on) and is 100% avalanche tested. The green product designation indicates RoHS compliance and lead-free construction.

The IPLU300N04S4-R8 is supplied in the H-PSOF-8-1 package, a surface-mount type designed for efficient thermal management.

IPLU300N04S4-R8 Quick Information

Product Type: MOSFET

Series: OptiMOS™-T2

Canonical Name: Infineon IPLU300N04S4-R8 N-channel Power MOSFET

Subcategory: N-Channel

IPLU300N04S4-R8 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: 100% lead free

IPLU300N04S4-R8 Estimated Pricing

Qty	Low	High
1+	$2.93	$2.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPLU300N04S4-R8 Features

N-channel enhancement mode MOSFET
40V drain-source breakdown voltage
300A continuous drain current
0.77mΩ maximum on-state resistance
AEC qualified

IPLU300N04S4-R8 Applications

Automotive electronic power steering
Automotive battery management systems
High current switching applications
Power conversion circuits

IPLU300N04S4-R8 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source breakdown voltage of the IPLU300N04S4-R8?

The drain-source breakdown voltage is 40V.

What is the typical gate threshold voltage for this MOSFET?

The typical gate threshold voltage is 3.0V, with a maximum of 4.0V and a minimum of 2.0V.

What is the maximum continuous drain current at 25°C case temperature?

The maximum continuous drain current at 25°C case temperature is 300A.

What is the maximum on-state resistance (RDS(on))?

The maximum on-state resistance is 0.77mΩ at VGS=10V and ID=100A.

What is the operating temperature range?

The operating and storage temperature range is -55°C to +175°C.

What package type is the IPLU300N04S4-R8 supplied in?

It is supplied in the H-PSOF-8-1 package.

Is this MOSFET AEC qualified?

Yes, the IPLU300N04S4-R8 is AEC qualified.