| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,480 pcs
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3480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
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The Infineon IPL65R230C7 is a high-performance N-channel Power MOSFET utilizing CoolMOS C7 technology. Designed for high voltage applications, it features a maximum drain-source voltage of 700V and a maximum on-resistance of 230mΩ. The typical gate charge is 20nC, enabling fast and reliable switching.
This MOSFET is housed in a ThinPAK 8x8 SMD package, which minimizes parasitic inductance for improved switching performance and increased power density. It is suitable for applications such as PFC stages and hard-switching PWM stages in computing, server, telecom, UPS, and solar power systems.
The device offers benefits like higher system efficiency due to lower switching losses, and increased power density solutions. It is qualified for industrial-grade applications according to JEDEC standards and features Pb-free plating and halogen-free mold compound.
The maximum drain-source voltage (VDS) at Tj,max is 700V.
The maximum on-resistance (RDS(on)) is 230mΩ.
The typical gate charge (Qg) is 20nC.
The IPL65R230C7 is supplied in the PG-VSON-4 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.