| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,811 pcs
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4811 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type | |
| Package / Case | |
| Reverse Recovery Time |
The Infineon IPL65R210CFD is a high-voltage N-channel power MOSFET from the CoolMOS CFD2 series. Designed using the superjunction principle, it provides excellent performance characteristics for demanding power applications.
Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 700V, a maximum On-Resistance (Rds(on)) of 0.21Ω, and a typical Gate Charge (Qg) of 68nC. The device also features an ultra-fast body diode with a diF/dt rating of 900 A/µs, contributing to its high commutation ruggedness and low switching losses.
Packaged in the space-saving ThinPAK 8x8mm SMD package, the IPL65R210CFD offers a low profile of 1mm and a small footprint of 64mm². This makes it ideal for designs requiring increased power density and reduced board space. The leadless package and short commutation loop further enhance its suitability for high-frequency applications.
This MOSFET is particularly well-suited for resonant switching stages in applications such as PC Silverbox, LCD TVs, lighting, servers, and telecom power supplies. Its Pb-free plating and halogen-free mold compound align with environmental considerations.
The maximum Drain-Source Voltage (Vds) at Tjmax for the IPL65R210CFD is 700V.
The maximum On-Resistance (Rds(on)) for the IPL65R210CFD is 0.21 Ohms.
The typical Gate Charge (Qg) for the IPL65R210CFD is 68 nC.
The IPL65R210CFD is supplied in a PG-VSON-4 package.
The RoHS status for the IPL65R210CFD is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the IPL65R210CFD is 1 Unlimited.
Yes, the IPL65R210CFD features Pb-free plating.