IPL65R165CFD

The Infineon IPL65R165CFD is a high-voltage N-channel power MOSFET from the CoolMOS CFD2 series. Designed using the superjunction principle, this transistor offers significant benefits for high-voltage power applications. It features a maximum drain-source voltage of 700V and a maximum on-resistance of 0.165Ω. The typical gate charge is 86nC, and it can handle a pulsed drain current of 67A.

This MOSFET is characterized by its extremely fast and robust body diode, contributing to low switching, commutation, and conduction losses. Its output capacitance (Eoss) at 400V is 6.8µJ, with a reverse recovery charge (Qrr) of 0.7µC and a reverse recovery time (tr) of 140ns. The body diode's peak reverse recovery current (Irrm) is 8.8A, and its diF/dt rating is 900 A/µs.

The IPL65R165CFD is supplied in a ThinPAK 8x8 package, a leadless SMD package with a small footprint of 64mm² and a low profile of 1mm. This package design, combined with low parasitic inductances, helps reduce system solution size in power-density-driven designs. It is qualified for industrial-grade applications according to JEDEC standards and features Pb-free plating and a halogen-free mold compound.

Potential applications include resonant switching stages for PC Silverbox, LCD TVs, lighting, servers, and telecom equipment. Its design prioritizes efficiency, reliability, and reduced system size.