| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,932 pcs
|
8932 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,000 pcs
|
1000 pcs | On Request | 1 | On Request | On Request | 15+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Package / Case | |
| SVHC Present |
The Infineon IPL65R130C7 is a high-performance N-channel Power MOSFET from the CoolMOS C7 series. It is designed using the superjunction principle, offering excellent efficiency and reliability for high-voltage power applications.
Key electrical specifications include a maximum drain-source voltage (VDS) of 700V at Tj,max, a maximum on-resistance (RDS(on)) of 130mΩ, and a typical gate charge (Qg) of 35nC. The transistor also features a pulse drain current (ID,pulse) of 75A and output capacitance energy (Eoss) of 4.2µJ at 400V.
This MOSFET is housed in a ThinPAK 8x8 SMD package, which minimizes parasitic inductance for fast and reliable switching. It is suitable for applications such as PFC stages and hard-switching PWM stages in computing, server, telecom, UPS, and solar power systems.
The component is Pb-free plated and uses a halogen-free mold compound, meeting industrial grade application standards according to JEDEC. Its design facilitates easy implementation and offers benefits like higher system efficiency and increased power density.
700V.
130mOhm.
35nC.
75A.
PG-VSON-4 surface mount package.
4.2µJ.
55A/µs.