Mfr Part #:

IPL60R199CP

Mfr Name: Infineon

The Infineon IPL60R199CP is a 600V CoolMOS CP N-channel Power MOSFET designed for high efficiency and compact solutions. It offers low switching and conduction losses.

✓ Total Stock: 27,070 pcs

IPL60R199CP Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Optech Co.,Limited ✓ Non-Authorised Inventory information	22,333 pcs On Request	22333 pcs	On Request	1	On Request	On Request	19+	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	4,737 pcs On Request	4737 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPL60R199CP Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Gate Charge	32nC
Halogen Free	Halogen free
Mounting Type	Surface Mount
Package / Case	PG-VSON-4

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IPL60R199CP Description

Short technical summary and product information.

The Infineon IPL60R199CP is a 600V CoolMOS CP N-channel Power MOSFET. This series provides the benefits of a fast-switching SJ MOSFET with ease of use, offering extremely low switching and conduction losses for more efficient, compact, lighter, and cooler switching applications.

The device features a maximum drain-source voltage of 650V and a maximum on-resistance of 0.199 Ohms. Typical gate charge is 32 nC, with a pulsed drain current capability of 63A. The energy in output capacitance (Eoss) at 400V is 6.1 µJ, and the body diode dI/dt is 200 A/µs.

Packaged in a ThinPAK PG-VSON-4, this MOSFET offers a significantly smaller package size (64mm²) and a low profile (1mm height) compared to D²PAK, combined with low parasitic inductances. This enables designers to decrease system solution size in power-density-driven designs.

Potential applications include servers and adapters. The component is qualified according to JEDEC (J-STD-20 and JESD22) for target applications and features Pb-free plating and Halogen-free construction.

IPL60R199CP Quick Information

Product Type: MOSFET

Series: CoolMOS CP

Canonical Name: Infineon IPL60R199CP 600V CoolMOS CP N-channel Power MOSFET

Subcategory: Power MOSFET

IPL60R199CP Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Lead Free: Pb-free plating

IPL60R199CP Features

650V maximum drain-source voltage.
0.199 Ohm maximum on-resistance.
32nC typical gate charge.
Compact ThinPAK PG-VSON-4 package.
Pb-free plating and Halogen-free.

IPL60R199CP Applications

Suitable for server applications.
Ideal for adapter power supplies.
Enables high power density designs.

IPL60R199CP FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage for the IPL60R199CP?

The maximum drain-source voltage (Vds) at Tjmax is 650V.

What is the maximum on-resistance of the IPL60R199CP MOSFET?

The maximum on-resistance (RDS(on)) is 0.199 Ohms.

What is the typical gate charge for the IPL60R199CP?

The typical gate charge (Qg) is 32 nC.

What package type is the Infineon IPL60R199CP supplied in?

The IPL60R199CP is supplied in the ThinPAK PG-VSON-4 package.

Is the Infineon IPL60R199CP RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for this component?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

Does the IPL60R199CP meet REACH regulations?

The REACH status is REACH Unaffected.