| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
4,020 pcs
|
4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Industrial Grade | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Tape & Reel | |
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| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPL60R125C7AUMA1 is an N-Channel enhancement mode power MOSFET from Infineon's CoolMOS C7 series, built on superjunction technology. It is rated for a drain-source voltage of 600V (650V at Tj,max) and a continuous drain current of 17A at Tc (30A at Tj<150°C). The device offers a maximum on-resistance of 125 mOhm at Vgs=10V and Id=7.8A, with a typical gate charge of 34 nC.
Designed for both hard and soft switching topologies, this MOSFET is suitable for PFC and high-performance LLC converters. It features a high dv/dt ruggedness of 120 V/ns and a body diode di/dt of 380 A/µs. The 4-pin Kelvin source concept enables easy device control and reduced parasitic inductance.
The device is housed in a PG-VSON-4 surface mount package (also known as 4-PowerTSFN), which offers low parasitic inductance for optimized PCB layout. It is qualified for industrial grade applications per JEDEC standards.
| Qty | Low | High |
|---|---|---|
| 3,000+ | $2.21 | $2.21 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-40°C to 150°C (TJ).
PG-VSON-4 (also known as 4-PowerTSFN).
RoHS3 Compliant (unverified).
34 nC at Vgs=10V.
125 mOhm at Id=7.8A, Vgs=10V.
17A continuous at Tc, 30A at Tj<150°C, 66A pulsed.
103W at Tc.