| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,000 pcs
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4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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125 pcs
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125 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request |
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The Infineon IPL60R125C7 is a 600V N-channel power MOSFET from the CoolMOS C7 series. This technology is designed for high voltage power applications, offering improved efficiency and power density.
Key electrical specifications include a maximum drain-source voltage of 650V, a maximum on-resistance of 125mΩ, and a typical gate charge of 34nC. It supports a continuous drain current of 30A at Tj<150°C and a pulse current of 66A. The output capacitance (Eoss) at 400V is 4µJ, and the body diode exhibits a diF/dt rating of 380 A/µs.
This MOSFET is suitable for hard and soft switching applications, including PFC and high-performance LLC stages. It features increased MOSFET dv/dt ruggedness to 120V/ns, contributing to higher system efficiency by lowering switching losses. The device is qualified for industrial grade applications according to JEDEC standards.
The IPL60R125C7 is housed in a PG-VSON-4 SMD package with very low parasitic inductance, designed for optimized PCB assembly and layout. Its 4-pin Kelvin source concept aids in easy device control. Potential applications include SMPS for computing, server, telecom, and solar power systems.
The maximum drain-source voltage (Vds) at Tj,max is 650V.
The maximum on-resistance (Rds(on)) is 125mΩ.
The typical gate charge (Qg) is 34nC.
The continuous drain current (Id,continuous) is 30A at Tj<150°C.
The IPL60R125C7 is supplied in a PG-VSON-4 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.