| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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3,421 pcs
|
3421 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPL60R095CFD7 is a 600V N-channel power MOSFET utilizing Infineon's CoolMOS CFD7 technology. This technology is designed for high voltage power MOSFETs based on the superjunction principle, offering optimized performance for soft switching applications such as phase-shift full-bridge (ZVS) and LLC.
Key electrical characteristics include a maximum Drain-Source Voltage (Vds) of 650V, a maximum On-Resistance (Rds(on)) of 95mΩ, and a typical Gate Charge (Qg) of 51nC. It also features a pulsed drain current of 97A and an output capacitance energy (Eoss) of 5.9µJ at 400V. The integrated ultra-fast body diode provides best-in-class reverse recovery charge (Qrr) and improved ruggedness.
This MOSFET is suitable for applications like server power supplies, telecom equipment, and EV charging systems. It is packaged in a PG-VSON-4 surface mount package, designed for efficient thermal management and ease of integration into modern power designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
650V maximum.
PG-VSON-4 surface mount.
51nC.
95mOhm.
97A.
5.9µJ.
1300A/µs.