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IPL60R085P7 The Infineon IPL60R085P7 is a 600V CoolMOS P7 series N-channel power MOSFET. It offers low switching and conduction losses for efficient power conversion.
Mfr Part #:

IPL60R085P7

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPL60R085P7 is a 600V CoolMOS P7 series N-channel power MOSFET. It offers low switching and conduction losses for efficient power conversion.
✓ Total Stock: 7,577 pcs

IPL60R085P7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
PROSOFT ELECTRONICS ✓
Non-Authorised Inventory information
6,000 pcs
On Request
6000 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
1,577 pcs
On Request
1577 pcs On Request 1 On Request On Request On Request On Request On Request
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IPL60R085P7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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IPL60R085P7 Description

Short technical summary and product information.

The Infineon IPL60R085P7 is a 600V CoolMOS P7 series power transistor designed for high-voltage applications. This 7th generation superjunction MOSFET combines fast switching speeds with excellent ease of use, including low ringing tendency and robust body diode performance.

 

Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 650V, a maximum On-Resistance (Rds(on)) of 85mΩ, and a typical Gate Charge (Qg) of 51nC. It also features a pulse drain current (Id,pulse) of 110A and output capacitance energy (Eoss) of 5.5µJ at 400V.

 

This MOSFET is suitable for hard and soft switching applications such as PFC and LLC stages, commonly found in PC Silverbox, adapters, LCD/PDP TVs, lighting, servers, telecom, and UPS systems. Its design emphasizes reduced switching and conduction losses, leading to more efficient, compact, and cooler operation.

 

The IPL60R085P7 is available in a ThinPAK 8x8 package and a PG-VSON-4 package, both designed for efficient thermal management. It boasts excellent ESD robustness exceeding 2kV (HBM) and is fully qualified according to JEDEC for industrial applications.

IPL60R085P7 Quick Information

Product Type: Power MOSFET
Series: CoolMOS P7
Canonical Name: Infineon CoolMOS P7 Series 600V N-Channel Power MOSFET
Subcategory: N-Channel Power MOSFET

IPL60R085P7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPL60R085P7 Features

  • 650V maximum Drain-Source Voltage.
  • 85mΩ maximum On-Resistance.
  • 110A pulse drain current capability.
  • Excellent ESD robustness >2kV.
  • ThinPAK 8x8 and PG-VSON-4 packages.

IPL60R085P7 Applications

  • Suitable for PFC and LLC stages.
  • Used in PC Silverbox applications.
  • Ideal for power adapters.
  • Applicable in LCD and PDP TVs.
  • Designed for server power supplies.

IPL60R085P7 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum Drain-Source Voltage for the IPL60R085P7?

The maximum Drain-Source Voltage (Vds) at Tj,max is 650V.

What is the maximum On-Resistance of the IPL60R085P7?

The maximum On-Resistance (Rds(on)) is 85mΩ.

What is the typical Gate Charge for this MOSFET?

The typical Gate Charge (Qg) is 51nC.

What package options are available for the IPL60R085P7?

The IPL60R085P7 is available in ThinPAK 8x8 and PG-VSON-4 packages.

What is the ESD robustness of the IPL60R085P7?

The part has an ESD robustness greater than 2kV (HBM).

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