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IPL60R075CFD7 The Infineon IPL60R075CFD7 is a 650V N-channel power MOSFET from the CoolMOS CFD7 series. It offers a low on-resistance of 75mΩ and a typical gate charge of 67nC.
Mfr Part #:

IPL60R075CFD7

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPL60R075CFD7 is a 650V N-channel power MOSFET from the CoolMOS CFD7 series. It offers a low on-resistance of 75mΩ and a typical gate charge of 67nC.
✓ Total Stock: 4,238 pcs

IPL60R075CFD7 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
3,238 pcs
On Request
3238 pcs On Request 1 On Request On Request On Request On Request On Request
Optech Co.,Limited ✓
Non-Authorised Inventory information
1,000 pcs
On Request
1000 pcs On Request 1 On Request On Request 16+ On Request On Request
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IPL60R075CFD7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
Gate Charge
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SVHC Present
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IPL60R075CFD7 Description

Short technical summary and product information.

The Infineon IPL60R075CFD7 is a high-performance N-channel power MOSFET utilizing Infineon's CoolMOS CFD7 technology. Designed for high voltage applications, it features a maximum drain-source voltage of 650V and a low on-resistance of 75mΩ at maximum. The device boasts a typical gate charge of 67nC and a pulsed drain current capability of 129A.

 

This MOSFET is optimized for soft-switching applications such as phase-shift full-bridge (ZVS) and LLC topologies, commonly found in server, telecom, and EV charging equipment. Its design emphasizes high efficiency, reliability, and increased power density. The ultra-fast body diode and best-in-class reverse recovery charge (Qrr) contribute to its robust performance in demanding commutation scenarios.

 

The IPL60R075CFD7 is supplied in a PG-VSON-4 package, suitable for surface mount applications. Its features include low gate charge, improved MOSFET reverse diode ruggedness, and a low FOM (RDS(on)*Qg and RDS(on)*Eoss), making it a compelling choice for modern power supply designs.

IPL60R075CFD7 Quick Information

Product Type: N-channel Power MOSFET
Series: CoolMOS CFD7
Canonical Name: Infineon IPL60R075CFD7 N-channel Power MOSFET
Subcategory: N-Channel

IPL60R075CFD7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPL60R075CFD7 Features

  • 650V drain-source voltage rating.
  • 75mΩ maximum on-resistance.
  • 67nC typical gate charge.
  • Optimized for soft-switching topologies.
  • PG-VSON-4 surface mount package.

IPL60R075CFD7 Applications

  • Ideal for ZVS and LLC resonant circuits.
  • Suitable for server power supplies.
  • Used in telecom power systems.
  • Applicable for EV charging solutions.

IPL60R075CFD7 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the IPL60R075CFD7?

The maximum drain-source voltage (Vds) at Tj,max is 650V.

What is the maximum on-resistance of the IPL60R075CFD7?

The maximum on-resistance (Rds(on)) is 75 mΩ.

What is the typical gate charge for this MOSFET?

The typical gate charge (Qg) is 67 nC.

What type of applications is the IPL60R075CFD7 optimized for?

It is optimized for soft-switching applications such as phase-shift full-bridge (ZVS) and LLC topologies.

What package is the IPL60R075CFD7 supplied in?

The IPL60R075CFD7 is supplied in a PG-VSON-4 package.

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