| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,413 pcs
|
6413 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Gate Charge | |
| Halogen Free | |
| Mounting Type | |
| Package / Case | |
| SVHC Present | |
| Storage Temperature |
The Infineon IPL60R065P7 is a 600V CoolMOS P7 series N-channel power MOSFET. This 7th generation superjunction technology offers significant reductions in switching and conduction losses, leading to more efficient, compact, and cooler applications. It features a maximum on-resistance of 65mΩ and a typical gate charge of 67nC.
Designed for applications such as PFC and LLC stages, hard-switching PWM, and resonant switching stages, the IPL60R065P7 provides excellent ESD robustness (>2kV HBM) and outstanding body diode ruggedness against hard commutation. Its low ringing tendency facilitates ease of use and fast design-in.
The device is housed in a PG-VSON-4 surface mount package. Its low switching and conduction losses simplify thermal management, enabling increased power density solutions with a smaller footprint and higher manufacturing quality.
The maximum Drain-Source Voltage (VDS) for the IPL60R065P7 is 650V at Tj,max.
The maximum On-Resistance (RDS(on)) for the IPL60R065P7 is 65 mΩ.
The typical Gate Charge (Qg) for the IPL60R065P7 is 67 nC.
The IPL60R065P7 is supplied in a PG-VSON-4 package.