Mfr Part #:

IPL60R060CFD7

Mfr Name: Infineon

The Infineon IPL60R060CFD7 is a 650V N-channel power MOSFET from the CoolMOS CFD7 series. It offers a low on-resistance of 60mΩ and a typical gate charge of 79nC.

✓ Total Stock: 1,101 pcs

$ Price Range: $2.40

IPL60R060CFD7 Available from 1 distributor

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Xingangxin ✓ Non-Authorised Inventory information	1,101 pcs On Request	1101 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

IPL60R060CFD7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Gate Charge	79nC
Lead Style	Gull Wing
Mounting Type	Surface Mount
SVHC Present	Not Present
Storage Temperature	-55°C ~ 150°C

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IPL60R060CFD7 Description

Short technical summary and product information.

The Infineon IPL60R060CFD7 is a high-performance N-channel power MOSFET designed for demanding applications. It utilizes Infineon's CoolMOS CFD7 technology, optimized for soft-switching topologies such as phase-shift full-bridge (ZVS) and LLC converters. This technology provides a revolutionary approach to high-voltage power MOSFETs, focusing on efficiency and reliability.

Key electrical specifications include a maximum Drain-Source Voltage (Vds) of 650V and a maximum on-resistance (Rds(on)) of 60mΩ. The typical gate charge (Qg) is 79nC, and the pulsed drain current (Id,pulse) is rated at 153A. The device also features a typical output capacitance (Eoss) of 9.1µJ at 400V and a body diode diF/dt of 1300A/µs.

This MOSFET is suitable for applications in servers, telecommunications, and EV charging. It is packaged in a PG-VSON-4 surface-mount package, designed for efficient thermal management and ease of integration into modern power designs. The product is qualified for industrial applications according to JEDEC standards.

CoolMOS CFD7 technology offers benefits such as an ultra-fast body diode, low gate charge, and best-in-class reverse recovery charge (Qrr). These features contribute to highest efficiency, improved hard commutation robustness, and enable increased power density solutions, making resonant switching topologies more efficient, reliable, lighter, and cooler.

IPL60R060CFD7 Quick Information

Product Type: MOSFET

Series: CoolMOS CFD7

Canonical Name: Infineon IPL60R060CFD7 N-Channel Power MOSFET

Subcategory: Power MOSFET

IPL60R060CFD7 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPL60R060CFD7 Estimated Pricing

Qty	Low	High
1+	$2.40	$2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPL60R060CFD7 Features

650V Drain-Source Voltage rating.
Low 60mΩ maximum on-resistance.
Typical 79nC gate charge.
Optimized for soft-switching applications.
PG-VSON-4 surface mount package.

IPL60R060CFD7 Applications

Ideal for server power supplies.
Suitable for telecom infrastructure.
Used in EV charging stations.
Optimized for ZVS topologies.
Designed for LLC resonant converters.

IPL60R060CFD7 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the drain-source voltage rating of the IPL60R060CFD7?

The maximum drain-source voltage is 650V.

What is the on-resistance of the IPL60R060CFD7?

The maximum on-resistance is 60mΩ.

What is the gate charge of the IPL60R060CFD7?

The typical gate charge is 79nC.

What is the package type of the IPL60R060CFD7?

It comes in a PG-VSON-4 surface-mount package.

What is the maximum pulsed drain current?

The maximum pulsed drain current is 153A.

What is the output capacitance energy at 400V?

The typical Eoss at 400V is 9.1µJ.

What is the body diode diF/dt rating?

The typical body diode diF/dt is 1300A/µs.