| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | 1424+ | On Request | On Request |
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The IPI65R099C6 is an N-Channel Power MOSFET manufactured by Infineon Technologies. It utilizes MOSFET (Metal Oxide) technology and is designed for high-voltage switching applications.
Key electrical specifications include a maximum drain-to-source voltage of 650V, a continuous drain current of 38A at Tc, and a maximum drain-source on-resistance of 99mOhm at 12.8A and 10V gate drive. The gate charge is 127nC at 10V, and input capacitance is 2780pF at 100V. The device can dissipate up to 278W at Tc.
The MOSFET is through-hole mounted and comes in a TO-262-3 Long Leads package (also known as I²Pak, TO-262AA), with supplier device package PG-TO262-3-1. It operates over a junction temperature range of -55°C to 150°C.
This component is suitable for power supply, motor control, and other high-efficiency switching applications requiring high voltage and low on-resistance.
650V.
TO-262-3 Long Leads (I²Pak, TO-262AA).
-55°C to 150°C (junction temperature).
Yes, it is listed as RoHS3 compliant, but this is unverified.
38A at Tc.
99mOhm maximum at 12.8A and 10V gate drive.
127nC at 10V.