| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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440 pcs
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440 pcs | On Request | 1 | On Request | On Request | 12+ | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Military Grade | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The IPI60R385CP is an N-channel power MOSFET from Infineon Technologies, designed for high-voltage switching applications. It features a 600V drain-source voltage rating and a continuous drain current of 9A at case temperature.
Key electrical specifications include a maximum on-resistance of 385mΩ at 5.2A and 10V gate drive, a maximum gate charge of 22nC at 10V, and an input capacitance of 790pF at 100V. The device can dissipate up to 83W and operates over a junction temperature range of -55°C to 150°C.
The MOSFET is housed in a TO-262-3 through-hole package (supplier device package PG-TO262-3-1), making it suitable for power supply and power management circuits. It is RoHS3 compliant per existing data.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.41 | $0.41 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 600V.
The continuous drain current is 9A at case temperature.
The maximum on-resistance is 385mΩ at 5.2A drain current and 10V gate-source voltage.
The operating junction temperature range is -55°C to 150°C.
The package is TO-262-3 (I²Pak, TO-262AA) with through-hole mounting.
The component is marked as RoHS3 compliant, though this is unverified from the manufacturer.
The maximum gate threshold voltage is 3.5V at 340µA drain current.