| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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822 pcs
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822 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
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The IPI60R380C6 is a high-voltage N-channel power MOSFET from Infineon's CoolMOS family, designed for efficient power conversion. It offers a drain-source breakdown voltage of 600V and a continuous drain current of 10.6A at 25°C case temperature. The device features a low on-resistance of 380mOhm maximum at 3.8A and 10V gate drive, enabling reduced conduction losses. Gate charge is 32nC at 10V, and input capacitance is 700pF at 100V drain-source voltage. The MOSFET is through-hole mounted in a TO-262-3 long leads package (PG-TO262-3-1). It operates over a junction temperature range of -55°C to 150°C and can dissipate up to 83W at 25°C case temperature. Typical applications include switch-mode power supplies, power factor correction, and lighting. The device is RoHS3 compliant and has an MSL of 1 (unlimited).
600V.
TO-262-3 Long Leads, I²Pak, TO-262AA (PG-TO262-3-1).
-55°C to 150°C (junction).
Yes, RoHS3 compliant.
32 nC at 10V.
380 mOhm maximum at 3.8A and 10V.
10.6A at 25°C case temperature.