| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,350 pcs
|
2350 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
1,200 pcs
|
1200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPI120N04S4-01 is an N-channel OptiMOS®-T2 power transistor. It features a drain-source breakdown voltage of 40V and a low on-state resistance, with R DS(on) as low as 1.5 mΩ at 10V gate-source voltage and 100A drain current for the SMD version.
This AEC-qualified MOSFET operates at temperatures up to 175°C and has a continuous drain current rating of 120A at 25°C case temperature. It is available in PG-TO220-3, PG-TO262-3, and PG-TO263-3 packages, supporting both through-hole and surface-mount applications.
Key electrical characteristics include a gate threshold voltage typically around 3V, and dynamic parameters such as input capacitance (Ciss) up to 14000pF and output capacitance (Coss) up to 3150pF. The device also includes a reverse diode with a continuous forward current of 120A.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 40V.
The typical gate threshold voltage is 3V.
The maximum on-state resistance is 1.9mΩ at 10V gate-source voltage and 100A drain current, and 1.5mΩ for the SMD version under the same conditions.
The continuous drain current is 120A at 25°C case temperature and 120A at 100°C case temperature.
The operating and storage temperature range is -55°C to +175°C.
The IPI120N04S4-01 is available in PG-TO220-3, PG-TO262-3, and PG-TO263-3 packages.
Yes, the IPI120N04S4-01 is AEC qualified.