IPI120N04S4-01 The Infineon IPI120N04S4-01 is an N-channel MOSFET designed for power applications. It offers a 40V drain-source breakdown voltage and a low on-state resistance.
Mfr Part #:

IPI120N04S4-01

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPI120N04S4-01 is an N-channel MOSFET designed for power applications. It offers a 40V drain-source breakdown voltage and a low on-state resistance.
✓ Total Stock: 3,550 pcs
$ Price Range: $2.40

IPI120N04S4-01 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,350 pcs
2350 pcs On Request 1 On Request On Request 24+ On Request On Request
Non-Authorised Inventory information
1,200 pcs
1200 pcs On Request 1 On Request On Request On Request On Request On Request

IPI120N04S4-01 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Mounting Type
Operating Temperature
Power Dissipation

IPI120N04S4-01 Description

Short technical summary and product information.

The Infineon IPI120N04S4-01 is an N-channel OptiMOS®-T2 power transistor. It features a drain-source breakdown voltage of 40V and a low on-state resistance, with R DS(on) as low as 1.5 mΩ at 10V gate-source voltage and 100A drain current for the SMD version.

 

This AEC-qualified MOSFET operates at temperatures up to 175°C and has a continuous drain current rating of 120A at 25°C case temperature. It is available in PG-TO220-3, PG-TO262-3, and PG-TO263-3 packages, supporting both through-hole and surface-mount applications.

 

Key electrical characteristics include a gate threshold voltage typically around 3V, and dynamic parameters such as input capacitance (Ciss) up to 14000pF and output capacitance (Coss) up to 3150pF. The device also includes a reverse diode with a continuous forward current of 120A.

IPI120N04S4-01 Quick Information

Product Type: MOSFET
Series: OptiMOS®-T2
Canonical Name: Infineon OptiMOS®-T2 Power-Transistor N-channel MOSFET
Subcategory: N-Channel

IPI120N04S4-01 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPI120N04S4-01 Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPI120N04S4-01 Features

  • 40V drain-source breakdown voltage.
  • Low 1.5mΩ on-state resistance.
  • 120A continuous drain current.
  • AEC qualified for automotive use.
  • Operates up to 175°C.

IPI120N04S4-01 Applications

  • Suitable for EPS motor control.
  • Used in automotive power systems.
  • Ideal for high-current switching.
  • Efficient power conversion designs.

IPI120N04S4-01 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the IPI120N04S4-01?

The drain-source breakdown voltage is 40V.

What is the typical gate threshold voltage?

The typical gate threshold voltage is 3V.

What is the maximum on-state resistance (Rds(on))?

The maximum on-state resistance is 1.9mΩ at 10V gate-source voltage and 100A drain current, and 1.5mΩ for the SMD version under the same conditions.

What is the continuous drain current rating?

The continuous drain current is 120A at 25°C case temperature and 120A at 100°C case temperature.

What is the operating temperature range?

The operating and storage temperature range is -55°C to +175°C.

What package types are available for the IPI120N04S4-01?

The IPI120N04S4-01 is available in PG-TO220-3, PG-TO262-3, and PG-TO263-3 packages.

Is the IPI120N04S4-01 AEC qualified?

Yes, the IPI120N04S4-01 is AEC qualified.

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