| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
6,020 pcs
|
6020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| AEC-Q101 | |
| Automotive Grade | |
| Avalanche Current | |
| Avalanche Energy | |
| Configuration | |
| Current | |
| Diode Continuous Forward Current | |
| Diode Forward Voltage | |
| Diode Pulse Current | |
| Drain to Source Voltage (Vdss) | |
| Drain-Source On-Resistance (Maximum @ Vgs=4.5 V, Id=10 A) | |
| FET Feature | |
| Fall Time | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate plateau voltage | |
| Gate-Source Leakage Current | |
| Gate-to-Drain Charge | |
| Gate-to-Source Charge | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance | |
| Power | |
| Pulsed Drain Current | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Charge | |
| Reverse Recovery Time | |
| Reverse Transfer Capacitance | |
| Rise Time | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance Junction-Case | |
| Turn-Off Delay Time | |
| Turn-On Delay Time | |
| Vgs(th) (Max) @ Id | |
| Zero Gate Voltage Drain Current (Maximum @ Vds=100 V, Vgs=0 V, Tj=125 °C) | |
| Zero Gate Voltage Drain Current (Maximum @ Vds=100 V, Vgs=0 V, Tj=25 °C) | |
| continuous_drain_current (Nominal @ one channel active, Tc=100 °C, Vgs=10 V) | |
| continuous_drain_current (Nominal @ one channel active, Tc=25 °C, Vgs=10 V) | |
| drain_source_breakdown_voltage (Minimum @ Vgs=0 V, Id=1 mA) |
The IPG20N10S4L22AATMA1 is a dual N-channel enhancement mode power MOSFET from Infineon Technologies, part of the OptiMOS-T2 family. It features a logic level gate, allowing full gate drive at 4.5V and 10V. The device is rated for a drain-source breakdown voltage of 100V (minimum) and a continuous drain current of 20A at Tc=25°C, with pulsed drain current capability up to 80A. Typical drain-source on-resistance is 22mOhm at Vgs=10V, Id=17A. The MOSFET is housed in a PG-TDSON-8-10 (8-PowerVDFN) surface-mount package with wettable flank terminals, enabling automatic optical inspection. It offers fast switching with typical turn-on delay of 5ns and fall time of 18ns. With a maximum junction temperature of 175°C and an MSL rating of 1 up to 260°C peak reflow, this part is suitable for automotive and industrial applications requiring high efficiency and thermal performance. The device is AEC Q101 qualified and 100% avalanche tested.
| Qty | Low | High |
|---|---|---|
| 5,000+ | $0.75 | $0.75 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The minimum drain-source breakdown voltage is 100V at Vgs=0V, Id=1mA.
At Tc=25°C and Vgs=10V, the continuous drain current is 20A (one channel active).
The operating junction temperature range is -55°C to 175°C.
The datasheet claims it is a green product and RoHS compliant, though this is unverified.
The device is housed in a PG-TDSON-8-10 (8-PowerVDFN) surface-mount package with wettable flank terminals.
Typical RDS(on) is 22mOhm at Vgs=10V, Id=17A. Maximum is 22mOhm.
Yes, the device is AEC Q101 qualified.