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IPG20N10S4L-35 The Infineon IPG20N10S4L-35 is a dual N-channel enhancement mode MOSFET. It offers a 100V drain-source breakdown voltage and a 20A continuous drain current.
Mfr Part #:

IPG20N10S4L-35

Available from 3 distributors
Mfr Name: Infineon
Infineon
The Infineon IPG20N10S4L-35 is a dual N-channel enhancement mode MOSFET. It offers a 100V drain-source breakdown voltage and a 20A continuous drain current.
✓ Total Stock: 14,830 pcs
$ Price Range: $1.67

IPG20N10S4L-35 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
7,993 pcs
On Request
7993 pcs On Request 1 On Request On Request 21+ On Request On Request
Smaxon Electronics ✓
Non-Authorised Inventory information
4,027 pcs
On Request
4027 pcs On Request 1 On Request On Request 15+ On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
2,810 pcs
On Request
2810 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPG20N10S4L-35 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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IPG20N10S4L-35 Description

Short technical summary and product information.

The Infineon IPG20N10S4L-35 is an OptiMOS™-T2 power transistor featuring dual N-channel logic level enhancement mode. It is AEC Q101 qualified and operates at temperatures up to 175°C.

 

Key electrical characteristics include a drain-source breakdown voltage of 100V and a maximum continuous drain current of 20A at 25°C case temperature. The on-state resistance is as low as 35mΩ at VGS=10V and ID=17A. Dynamic characteristics include input capacitance of 1105pF and output capacitance of 370pF.

 

This MOSFET comes in a PG-TDSON-8-4 package. It is designed for automotive and LED applications, offering high performance and reliability.

 

Environmental compliance includes RoHS3 compliance and an MSL rating of 1.

IPG20N10S4L-35 Quick Information

Product Type: MOSFET
Series: OptiMOS™-T2
Canonical Name: Infineon IPG20N10S4L-35 N-Channel MOSFET
Subcategory: N-Channel

IPG20N10S4L-35 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPG20N10S4L-35 Estimated Pricing

Qty Low High
1+ $1.67 $1.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPG20N10S4L-35 Features

  • Dual N-channel logic level enhancement mode.
  • AEC Q101 qualified for automotive use.
  • 100V drain-source breakdown voltage.
  • 20A continuous drain current.
  • PG-TDSON-8-4 package.

IPG20N10S4L-35 Applications

  • Suitable for automotive applications.
  • Ideal for LED lighting circuits.
  • Power management solutions.
  • High-efficiency switching designs.

IPG20N10S4L-35 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

The drain-source breakdown voltage is 100V.

What is the typical gate threshold voltage?

The typical gate threshold voltage is 1.6V.

What is the maximum continuous drain current?

The maximum continuous drain current is 20A at 25°C case temperature.

What is the maximum on-state resistance?

The maximum on-state resistance is 35mΩ at VGS=10V and ID=17A.

What is the operating temperature range?

The operating and storage temperature range is -55°C to +175°C.

What is the package type?

The package type is PG-TDSON-8-4.

Is this product RoHS compliant?

This product is RoHS3 Compliant.

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