IPG20N10S4L-22A The Infineon IPG20N10S4L-22A is a dual N-channel logic level enhancement mode MOSFET. It offers a 100V breakdown voltage and 20A continuous drain current.
Mfr Part #:

IPG20N10S4L-22A

Available from 2 distributors
Mfr Name: Infineon
Infineon
The Infineon IPG20N10S4L-22A is a dual N-channel logic level enhancement mode MOSFET. It offers a 100V breakdown voltage and 20A continuous drain current.
✓ Total Stock: 4,128 pcs
$ Price Range: $1.67

IPG20N10S4L-22A Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
2,572 pcs
2572 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
1,556 pcs
1556 pcs On Request 1 On Request On Request 16+ On Request On Request

IPG20N10S4L-22A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Industrial Grade
Input Capacitance
Medical Grade
Military Grade
Mounting Type
Operating Temperature
Power Dissipation
Reverse Recovery Time
Storage Temperature
Tape & Reel

IPG20N10S4L-22A Description

Short technical summary and product information.

The Infineon IPG20N10S4L-22A is an OptiMOS™-T2 Power-Transistor designed for power switching applications. This dual N-channel MOSFET features logic-level enhancement mode operation and is AEC Q101 qualified.

 

Key electrical specifications include a 100V drain-source breakdown voltage and a maximum continuous drain current of 20A at 25°C. The on-state resistance is as low as 22mΩ at VGS=10V and ID=17A. It also offers a pulsed drain current of 80A and avalanche energy of 130mJ.

 

With an operating temperature range of -55°C to +175°C and a junction-to-case thermal resistance of 2.5 K/W, this device is suitable for demanding environments. It is supplied in a PG-TDSON-8-10 package, designed for surface mounting.

 

This MOSFET is MSL1 rated and features 100% avalanche testing, making it feasible for automatic optical inspection (AOI). It is also a Green Product, compliant with RoHS standards.

IPG20N10S4L-22A Quick Information

Product Type: Power-Transistor
Series: IPG20N10S4L-22A
Canonical Name: Infineon IPG20N10S4L-22A OptiMOS™-T2 Power-Transistor
Subcategory: N-Channel

IPG20N10S4L-22A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPG20N10S4L-22A Estimated Pricing

Qty Low High
1+ $1.67 $1.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPG20N10S4L-22A Features

  • Dual N-channel logic level enhancement mode.
  • AEC Q101 qualified for automotive use.
  • 100V drain-source breakdown voltage.
  • Low 22mΩ on-state resistance.
  • Operates up to 175°C.

IPG20N10S4L-22A Applications

  • Suitable for automotive applications.
  • Ideal for power switching circuits.
  • Used in high-temperature environments.
  • Designed for surface mount assembly.

IPG20N10S4L-22A FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum continuous drain current for the IPG20N10S4L-22A?

The maximum continuous drain current is 20A at 25°C with VGS=10V.

What is the drain-source breakdown voltage of the IPG20N10S4L-22A?

The drain-source breakdown voltage is 100V.

What is the maximum on-state resistance (RDS(on)) for this MOSFET?

The maximum on-state resistance is 28mΩ at VGS=4.5V, ID=10A, and 22mΩ at VGS=10V, ID=17A.

What is the operating temperature range for the IPG20N10S4L-22A?

The operating temperature range is -55°C to +175°C.

What package type is the IPG20N10S4L-22A supplied in?

It is supplied in the PG-TDSON-8-10 package.

Is the IPG20N10S4L-22A AEC Q101 qualified?

Yes, the IPG20N10S4L-22A is AEC Q101 qualified.

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