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IPG20N10S436AATMA1 The IPG20N10S436AATMA1 is a dual N-channel MOSFET from Infineon Technologies with 100V drain-to-source voltage and 20A continuous drain current. It features a low maximum on-resistance of 36mOhm at 10V gate drive.
Mfr Part #:

IPG20N10S436AATMA1

Available from 2 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The IPG20N10S436AATMA1 is a dual N-channel MOSFET from Infineon Technologies with 100V drain-to-source voltage and 20A continuous drain current. It features a low maximum on-resistance of 36mOhm at 10V gate drive.
✓ Total Stock: 6,258 pcs
$ Price Range: $0.57 - $2.29

IPG20N10S436AATMA1 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Components Technology Group, Inc. ✓
Non-Authorised Inventory information
3,448 pcs
On Request
3448 pcs On Request 1 On Request On Request On Request On Request On Request
Xingangxin ✓
Non-Authorised Inventory information
2,810 pcs
On Request
2810 pcs On Request 1 On Request On Request On Request On Request On Request
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IPG20N10S436AATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs(th) (Max) @ Id
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IPG20N10S436AATMA1 Description

Short technical summary and product information.

The IPG20N10S436AATMA1 from Infineon Technologies is a dual N-channel enhancement mode MOSFET designed for high-efficiency power management. It offers a 100V drain-to-source voltage and 20A continuous drain current capability.

 

The MOSFET has a maximum drain-source on-resistance of 36mOhm at a gate voltage of 10V and a 17A drain current, ensuring low conduction losses. The gate charge is typically 15nC at 10V, enabling fast switching. Input capacitance is 990pF at 25V.

 

The device is housed in an 8-PowerVDFN surface-mount package with wettable flanks, compatible with automated inspection. The supplier device package is PG-TDSON-8-10. Operating temperature range is -55°C to 175°C junction.

IPG20N10S436AATMA1 Quick Information

Product Type: Dual N-Channel MOSFET
Series: OptiMOS
Canonical Name: Infineon Technologies IPG20N10S436AATMA1 Dual N-Channel MOSFET, 100V, 20A, 8-PowerVDFN
Subcategory: Dual N-Channel MOSFET

IPG20N10S436AATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPG20N10S436AATMA1 Estimated Pricing

Qty Low High
1+ $2.29 $2.29
10+ $1.47 $1.47
50+ $1.11 $1.11
100+ $0.99 $0.99
500+ $0.79 $0.79
5,000+ $0.61 $0.61
15,000+ $0.57 $0.57

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPG20N10S436AATMA1 Features

  • Dual N-channel MOSFET in an 8-PowerVDFN package.
  • Rated for 100V drain-to-source voltage.
  • 20A continuous drain current capability.
  • 36mOhm max on-resistance at 10V gate drive.
  • Operating temperature range from -55°C to 175°C.

IPG20N10S436AATMA1 Applications

  • Used in DC-DC converter circuits.
  • Ideal for battery management systems.
  • Suitable for motor drive applications.
  • Applicable for power load switching.

IPG20N10S436AATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage rating?

The drain-to-source voltage (Vds) is 100V.

What package is the IPG20N10S436AATMA1 available in?

The package is 8-PowerVDFN with supplier package designation PG-TDSON-8-10.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C (junction).

Is this component RoHS compliant?

Existing data indicates RoHS3 Compliant, but the compliance status is unverified (low confidence).

What is the maximum on-resistance?

The maximum drain-source on-resistance is 36mOhm at Id=17A and Vgs=10V.

What is the gate charge of this MOSFET?

The maximum gate charge is 15nC at Vgs=10V.

Is this MOSFET a single or dual channel?

It is a dual N-channel configuration (2 N-Channel).

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