DistyParts Icon
IPG20N10S4-36A The Infineon IPG20N10S4-36A is a dual N-channel OptiMOS™-T2 Power MOSFET designed for automotive applications. It offers a 100V drain-source breakdown voltage and a 20A continuous drain current.
Mfr Part #:

IPG20N10S4-36A

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IPG20N10S4-36A is a dual N-channel OptiMOS™-T2 Power MOSFET designed for automotive applications. It offers a 100V drain-source breakdown voltage and a 20A continuous drain current.
✓ Total Stock: 5,274 pcs
$ Price Range: $2.40

IPG20N10S4-36A Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
5,274 pcs
On Request
5274 pcs On Request 1 On Request On Request 18+ On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

IPG20N10S4-36A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Lead Style
Mounting Type
Power Dissipation
Reverse Recovery Time
View Similar Products (0)

IPG20N10S4-36A Description

Short technical summary and product information.

The Infineon IPG20N10S4-36A is a dual N-channel, normal level enhancement mode MOSFET from the OptiMOS™-T2 series. This component is AEC Q101 qualified and rated for operation up to 175°C, making it suitable for demanding automotive applications.

 

Key electrical characteristics include a drain-source breakdown voltage of 100V and a continuous drain current of 20A at 25°C case temperature. The on-state resistance (RDS(on)) is typically 31mW at 17A and 10V gate-source voltage. Dynamic characteristics such as input capacitance (Ciss) are typically 660pF, and output capacitance (Coss) is typically 210pF.

 

This MOSFET features a PG-TDSON-8 package suitable for surface mounting. It also boasts features like 100% avalanche tested and feasibility for automatic optical inspection (AOI). The device is RoHS compliant and rated for MSL1 up to 260°C peak reflow.

IPG20N10S4-36A Quick Information

Product Type: MOSFET
Series: OptiMOS™-T2
Canonical Name: Infineon IPG20N10S4-36A Dual N-channel MOSFET
Subcategory: Power MOSFET

IPG20N10S4-36A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPG20N10S4-36A Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPG20N10S4-36A Features

  • Dual N-channel normal level enhancement mode MOSFET.
  • AEC Q101 qualified for automotive use.
  • 100V drain-source breakdown voltage.
  • 20A continuous drain current at 25°C.
  • PG-TDSON-8 surface mount package.

IPG20N10S4-36A Applications

  • Suitable for automotive applications.
  • Power switching circuits.
  • High-temperature environments.
  • Automotive engine control modules.
  • General purpose power switching.

IPG20N10S4-36A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the package type of the IPG20N10S4-36A?

The IPG20N10S4-36A is housed in a PG-TDSON-8 package.

What is the operating temperature range?

-55°C to +175°C.

What is the drain-source breakdown voltage?

100V minimum.

What is the typical on-resistance?

31 mOhm typical, 36 mOhm maximum at VGS=10V, ID=17A.

What is the gate threshold voltage?

2.0V to 3.5V.

What are the switching speeds?

Typical turn-on delay 3ns, rise time 1ns, turn-off delay 4ns, fall time 3ns.

What is the total gate charge?

9.4 nC typical, 15 nC maximum.

Home
Account

Categories