| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
7,953 pcs
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7953 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
833 pcs
|
833 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request |
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The Infineon IPG20N06S4L-26A is a dual N-channel logic level enhancement mode power MOSFET from the OptiMOS™-T2 family. It is designed for automotive and power applications, featuring a 60V drain-source breakdown voltage (VDS) and a continuous drain current (ID) of 20A at 25°C case temperature with VGS=10V.
Key electrical characteristics include a gate threshold voltage (VGS(th)) ranging from 1.2V to 2.2V, and a low drain-source on-state resistance (RDS(on)) of 26mΩ maximum at VGS=10V and ID=17A. The device also exhibits a typical input capacitance (Ciss) of 1100pF and output capacitance (Coss) of 300pF.
This MOSFET operates within a wide temperature range of -55°C to +175°C. It is housed in a PG-TDSON-8 package, suitable for surface mounting. The device is AEC Q101 qualified and RoHS compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V minimum.
The continuous drain current is 20A at Tc=25°C with VGS=10V.
The maximum on-resistance at VGS=10V, ID=17A is 26mΩ.
The gate threshold voltage ranges from 1.2V minimum to 2.2V maximum.
The operating and storage temperature range is -55°C to +175°C.
The device is available in a PG-TDSON-8 surface mount package.
The typical input capacitance is 1100pF at VDS=25V, f=1MHz.