IPG20N06S4L-26 The Infineon IPG20N06S4L-26 is a dual N-channel logic level enhancement mode Power MOSFET. It offers a 60V drain-source breakdown voltage and a maximum continuous drain current of 20A.
Mfr Part #:

IPG20N06S4L-26

Available from 6 distributors
Mfr Name: Infineon
Infineon
The Infineon IPG20N06S4L-26 is a dual N-channel logic level enhancement mode Power MOSFET. It offers a 60V drain-source breakdown voltage and a maximum continuous drain current of 20A.
✓ Total Stock: 27,678 pcs
$ Price Range: $0.99

IPG20N06S4L-26 Available from 6 distributors

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✓ Non-Authorised

IPG20N06S4L-26 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Manufacturer Name
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Reverse Recovery Time

IPG20N06S4L-26 Description

Short technical summary and product information.

The Infineon IPG20N06S4L-26 is an OptiMOS™-T2 series N-channel Power MOSFET designed for automotive applications. It features a dual N-channel logic level enhancement mode configuration, making it suitable for various switching applications.

 

Key electrical characteristics include a drain-source breakdown voltage of 60V and a maximum continuous drain current of 20A at 25°C case temperature. The on-state resistance (RDS(on)) is as low as 21mΩ typical at VGS=10V and ID=17A. It operates over a wide temperature range from -55°C to +175°C.

 

This MOSFET is AEC Q101 qualified and rated for 175°C operating temperature. It comes in a PG-TDSON-8 package, designed for surface mounting.

 

It is suitable for applications requiring high efficiency and robust performance, such as ABS valves and LED lighting.

IPG20N06S4L-26 Quick Information

Product Type: Power MOSFET
Series: OptiMOS-T2
Canonical Name: Infineon IPG20N06S4L-26 OptiMOS™-T2 Power-Transistor
Subcategory: N-Channel Power MOSFET

IPG20N06S4L-26 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPG20N06S4L-26 Estimated Pricing

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1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPG20N06S4L-26 Features

  • Dual N-channel logic level enhancement mode.
  • AEC Q101 qualified for automotive use.
  • 175°C maximum operating temperature.
  • Low RDS(on) for efficient power switching.
  • PG-TDSON-8 surface mount package.

IPG20N06S4L-26 Applications

  • Suitable for ABS valve control.
  • Ideal for LED lighting applications.
  • Used in automotive powertrain ICs.
  • Efficient power switching circuits.

IPG20N06S4L-26 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source breakdown voltage for the IPG20N06S4L-26?

The drain-source breakdown voltage is 60V.

What is the typical gate threshold voltage?

The typical gate threshold voltage is 1.7V.

What is the maximum continuous drain current?

The maximum continuous drain current is 20A at 25°C.

What is the typical on-state resistance (RDS(on))?

The typical on-state resistance is 21mΩ at VGS=10V and ID=17A.

What is the operating temperature range?

The operating and storage temperature range is -55°C to +175°C.

What package type is the IPG20N06S4L-26 supplied in?

It is supplied in a PG-TDSON-8 package.

Is this MOSFET AEC Q101 qualified?

Yes, the IPG20N06S4L-26 is AEC Q101 qualified.

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