| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,600 pcs
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6600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPG20N06S4L-14 is an OptiMOS™-T2 Power-Transistor designed for automotive applications. This dual N-channel MOSFET features logic-level enhancement mode operation and a 60V drain-source breakdown voltage.
Key electrical characteristics include a continuous drain current of 20A at 25°C and 100°C, and a maximum on-state resistance of 20mΩ at VGS=4.5V and ID=10A. It also offers a pulsed drain current of up to 80A.
The device operates over a wide temperature range of -55°C to +175°C. It is housed in a PG-TDSON-8 package suitable for surface mounting.
This MOSFET is AEC Q101 qualified and meets RoHS compliance standards, making it a reliable choice for demanding automotive environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V.
The maximum continuous drain current is 20A.
The operating and storage temperature range is -55°C to +175°C.
The package type is PG-TDSON-8.
Yes, it is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.