IPG20N06S4L-14 The Infineon IPG20N06S4L-14 is a dual N-channel logic level enhancement mode automotive MOSFET. It offers a 60V drain-source breakdown voltage and 20A continuous drain current.
Mfr Part #:

IPG20N06S4L-14

Available from 1 distributors
Mfr Name: Infineon
Infineon
The Infineon IPG20N06S4L-14 is a dual N-channel logic level enhancement mode automotive MOSFET. It offers a 60V drain-source breakdown voltage and 20A continuous drain current.
✓ Total Stock: 6,600 pcs
$ Price Range: $2.40

IPG20N06S4L-14 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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6,600 pcs
6600 pcs On Request 1 On Request On Request On Request On Request On Request

IPG20N06S4L-14 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Mounting Type
Power Dissipation
Reverse Recovery Time
SVHC Present

IPG20N06S4L-14 Description

Short technical summary and product information.

The Infineon IPG20N06S4L-14 is an OptiMOS™-T2 Power-Transistor designed for automotive applications. This dual N-channel MOSFET features logic-level enhancement mode operation and a 60V drain-source breakdown voltage.

 

Key electrical characteristics include a continuous drain current of 20A at 25°C and 100°C, and a maximum on-state resistance of 20mΩ at VGS=4.5V and ID=10A. It also offers a pulsed drain current of up to 80A.

 

The device operates over a wide temperature range of -55°C to +175°C. It is housed in a PG-TDSON-8 package suitable for surface mounting.

 

This MOSFET is AEC Q101 qualified and meets RoHS compliance standards, making it a reliable choice for demanding automotive environments.

IPG20N06S4L-14 Quick Information

Product Type: Automotive MOSFET
Series: IPG20N06S4L-14
Canonical Name: Infineon IPG20N06S4L-14 OptiMOS™-T2 Power-Transistor
Subcategory: Power MOSFET

IPG20N06S4L-14 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPG20N06S4L-14 Estimated Pricing

Qty Low High
1+ $2.40 $2.40

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPG20N06S4L-14 Features

  • Dual N-channel logic level enhancement mode.
  • AEC Q101 qualified for automotive use.
  • 60V drain-source breakdown voltage.
  • 20A continuous drain current.
  • PG-TDSON-8 surface mount package.

IPG20N06S4L-14 Applications

  • Suitable for automotive power systems.
  • Ideal for switching applications.
  • Used in engine control modules.
  • Applicable for battery management.

IPG20N06S4L-14 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage for the IPG20N06S4L-14?

The drain-source breakdown voltage is 60V.

What is the maximum continuous drain current?

The maximum continuous drain current is 20A.

What is the operating temperature range?

The operating and storage temperature range is -55°C to +175°C.

What is the package type for this MOSFET?

The package type is PG-TDSON-8.

Is the IPG20N06S4L-14 RoHS compliant?

Yes, it is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL)?

The Moisture Sensitivity Level is 1 Unlimited.

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