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IPG20N06S3L-35 Dual N-channel logic level MOSFET from Infineon, rated for 55V drain-source voltage and 20A continuous drain current. Features low on-resistance of 35mΩ max at 10V and AEC Q101 qualification.
Mfr Part #:

IPG20N06S3L-35

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Dual N-channel logic level MOSFET from Infineon, rated for 55V drain-source voltage and 20A continuous drain current. Features low on-resistance of 35mΩ max at 10V and AEC Q101 qualification.
✓ Total Stock: 10,000 pcs

IPG20N06S3L-35 Available from 1 distributor

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10,000 pcs
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10000 pcs On Request 1 On Request On Request 10+ On Request On Request
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IPG20N06S3L-35 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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IPG20N06S3L-35 Description

Short technical summary and product information.

The IPG20N06S3L-35 is a dual N-channel enhancement mode power MOSFET from Infineon's OptiMOS-T family. It is designed for automotive and industrial applications requiring high efficiency and compact size. The device features logic level gate drive, allowing direct interfacing with low-voltage control circuits. Key electrical characteristics include a drain-source breakdown voltage of 55V, continuous drain current of 20A at 25°C (15.5A at 100°C), and a maximum on-resistance of 35mΩ at VGS=10V. The MOSFET is AEC Q101 qualified and RoHS compliant, with an operating temperature range of -55°C to 175°C. It is housed in a PG-TDSON-8-4 surface mount package (8-PowerVDFN) with MSL1 rating. The device also offers low gate charge (23nC max) and fast switching speeds, making it suitable for DC-DC converters, motor drives, and power management systems.

IPG20N06S3L-35 Quick Information

Product Type: MOSFET Array
Series: OptiMOS
Canonical Name: Infineon IPG20N06S3L-35 Dual N-Channel MOSFET, 55V, 20A, PG-TDSON-8-4
Subcategory: MOSFET Arrays

IPG20N06S3L-35 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
Lead Free: Yes

IPG20N06S3L-35 Features

  • Dual N-channel logic level MOSFET.
  • Rated for 55V drain-source voltage.
  • Continuous drain current up to 20A.
  • Low on-resistance of 35mΩ at 10V.
  • AEC Q101 qualified for automotive.

IPG20N06S3L-35 Applications

  • Used in automotive power management systems.
  • Ideal for DC-DC converter designs.
  • Suitable for motor drive applications.
  • For high-efficiency power switching circuits.

IPG20N06S3L-35 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the operating temperature range of the IPG20N06S3L-35?

-55°C to 175°C (junction temperature).

Is the IPG20N06S3L-35 RoHS compliant?

Yes, it is RoHS3 compliant (Green Product).

What package does the IPG20N06S3L-35 come in?

8-PowerVDFN (PG-TDSON-8-4) surface mount package.

What is the maximum drain-source voltage?

55V.

What is the continuous drain current rating?

20A at TC=25°C, 15.5A at TC=100°C.

What is the on-resistance at VGS=10V?

30mΩ typical, 35mΩ maximum.

Is the device AEC Q101 qualified?

Yes, it is AEC Q101 qualified.

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