| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
10,000 pcs
|
10000 pcs | On Request | 1 | On Request | On Request | 10+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| AEC-Q101 | |
| Automotive Grade | |
| Avalanche Energy (Single Pulse) | |
| Configuration | |
| Continuous Drain Current (Nominal @ Tc=100 °C, VGS=10 V) | |
| Current | |
| Diode Continuous Forward Current (one channel active) | |
| Diode Forward Voltage | |
| Drain Source On Resistance (Typical/Maximum @ VGS=5 V, ID=7 A) | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Fall Time | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Gate plateau voltage | |
| Gate-Source Leakage Current | |
| Gate-to-Drain Charge (Qgd) | |
| Gate-to-Source Charge (Qgs) | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Lead Style | |
| Mounting Type | |
| Operating Temperature | |
| Output Capacitance (Coss) | |
| Power | |
| Pulsed Drain Current (one channel active) | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Charge | |
| Reverse Recovery Time | |
| Reverse Transfer Capacitance (Crss) | |
| Rise Time | |
| Storage Temperature | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Thermal Resistance - Junction to Case | |
| Thermal Resistance, Junction to Ambient (SMD, minimal footprint) | |
| Turn-Off Delay Time | |
| Turn-On Delay Time | |
| Vgs(th) (Max) @ Id | |
| Zero Gate Voltage Drain Current |
The IPG20N06S3L-35 is a dual N-channel enhancement mode power MOSFET from Infineon's OptiMOS-T family. It is designed for automotive and industrial applications requiring high efficiency and compact size. The device features logic level gate drive, allowing direct interfacing with low-voltage control circuits. Key electrical characteristics include a drain-source breakdown voltage of 55V, continuous drain current of 20A at 25°C (15.5A at 100°C), and a maximum on-resistance of 35mΩ at VGS=10V. The MOSFET is AEC Q101 qualified and RoHS compliant, with an operating temperature range of -55°C to 175°C. It is housed in a PG-TDSON-8-4 surface mount package (8-PowerVDFN) with MSL1 rating. The device also offers low gate charge (23nC max) and fast switching speeds, making it suitable for DC-DC converters, motor drives, and power management systems.
-55°C to 175°C (junction temperature).
Yes, it is RoHS3 compliant (Green Product).
8-PowerVDFN (PG-TDSON-8-4) surface mount package.
55V.
20A at TC=25°C, 15.5A at TC=100°C.
30mΩ typical, 35mΩ maximum.
Yes, it is AEC Q101 qualified.