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IPG20N06S2L65AATMA1 Dual N-Channel Logic Level MOSFET from Infineon's OptiMOS series. Rated for 55V drain-source voltage and 20A continuous drain current.
Mfr Part #:

IPG20N06S2L65AATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Dual N-Channel Logic Level MOSFET from Infineon's OptiMOS series. Rated for 55V drain-source voltage and 20A continuous drain current.
✓ Total Stock: 1,225 pcs
$ Price Range: $0.50

IPG20N06S2L65AATMA1 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Smaxon Electronics ✓
Non-Authorised Inventory information
1,225 pcs
On Request
1225 pcs On Request 1 On Request On Request 18+ On Request On Request
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IPG20N06S2L65AATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Reverse Recovery Time (trr)
SVHC Present
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs(th) (Max) @ Id
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IPG20N06S2L65AATMA1 Description

Short technical summary and product information.

The IPG20N06S2L65AATMA1 is a dual N-channel enhancement mode MOSFET from Infineon Technologies, part of the OptiMOS power transistor family. It is designed for automotive and industrial applications requiring high efficiency and compact design.

 

Key electrical specifications include a maximum drain-source voltage of 55V, continuous drain current of 20A at 25°C (14A at 100°C), and a low on-state resistance of 65mΩ maximum at VGS=10V. The device features logic-level gate drive with a threshold voltage range of 1.2V to 2.0V.

 

The MOSFET is housed in a PG-TDSON-8 package (SuperSO8), suitable for surface mount assembly. It is AEC Q101 qualified, RoHS compliant, and rated for operating temperatures from -55°C to 175°C. The device is 100% avalanche tested and supports automatic optical inspection.

IPG20N06S2L65AATMA1 Quick Information

Product Type: Dual N-Channel MOSFET Array
Series: OptiMOS
Canonical Name: IPG20N06S2L65AATMA1 Dual N-Channel MOSFET Array
Subcategory: Dual N-Channel MOSFET

IPG20N06S2L65AATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPG20N06S2L65AATMA1 Estimated Pricing

Qty Low High
5,000+ $0.50 $0.50

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPG20N06S2L65AATMA1 Features

  • Dual N-channel enhancement mode MOSFET.
  • Rated for 55V drain-source voltage.
  • Continuous drain current up to 20A.
  • Low on-resistance of 65mΩ maximum.
  • AEC Q101 qualified for automotive.

IPG20N06S2L65AATMA1 Applications

  • Used in automotive power management systems.
  • Ideal for DC-DC converter circuits.
  • Suitable for motor control applications.
  • Applied in synchronous rectification designs.

IPG20N06S2L65AATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage?

55V.

What is the continuous drain current rating?

20A at 25°C case temperature.

What is the on-resistance?

65mΩ maximum at VGS=10V, ID=15A.

What is the operating temperature range?

-55°C to 175°C.

Is the device RoHS compliant?

Yes, it is a Green Product (RoHS compliant).

What package is the device available in?

PG-TDSON-8 (SuperSO8).

Is the device AEC Q101 qualified?

Yes, it is AEC Q101 qualified.

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