IPG20N06S2L35ATMA1 Dual N-Channel Logic Level MOSFET from Infineon, rated for 55V drain-source voltage and 20A continuous drain current. Features low on-resistance of 35mΩ at 10V gate drive.
Mfr Part #:

IPG20N06S2L35ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Dual N-Channel Logic Level MOSFET from Infineon, rated for 55V drain-source voltage and 20A continuous drain current. Features low on-resistance of 35mΩ at 10V gate drive.
✓ Total Stock: 11,020 pcs
$ Price Range: $0.55 - $2.22

IPG20N06S2L35ATMA1 Available from 1 distributor

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✓ Non-Authorised
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IPG20N06S2L35ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Reverse Recovery Time
Storage Temperature
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

IPG20N06S2L35ATMA1 Description

Short technical summary and product information.

The IPG20N06S2L35ATMA1 is a dual N-channel logic level MOSFET from Infineon's OptiMOS series. It is designed for automotive and industrial applications requiring high efficiency and compact design. The device integrates two independent MOSFETs in a single PG-TDSON-8 package, saving board space. Key electrical characteristics include a drain-source breakdown voltage of 55V, continuous drain current of 20A at 25°C case temperature, and a maximum on-resistance of 35mΩ at Vgs=10V. The logic level gate threshold allows direct drive from 3.3V or 5V microcontrollers. The MOSFET is AEC Q101 qualified and RoHS compliant, with an operating temperature range of -55°C to 175°C. The package offers low thermal resistance (2.3 K/W junction-to-case) and is suitable for surface mount assembly.

IPG20N06S2L35ATMA1 Quick Information

Product Type: MOSFET Array
Series: IPG20N06S2L-35
Canonical Name: Infineon IPG20N06S2L35ATMA1 Dual N-Channel Logic Level MOSFET, 55V, 20A, PG-TDSON-8
Subcategory: Logic Level Power MOSFET

IPG20N06S2L35ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 - Unlimited
REACH Status: REACH Unaffected

IPG20N06S2L35ATMA1 Estimated Pricing

Qty Low High
1+ $2.22 $2.22
10+ $1.42 $1.42
50+ $1.07 $1.07
100+ $0.96 $0.96
500+ $0.76 $0.76
5,000+ $0.59 $0.59
15,000+ $0.55 $0.55

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPG20N06S2L35ATMA1 Features

  • Dual N-channel logic level MOSFET.
  • Rated for 55V drain-source voltage.
  • Continuous drain current of 20A.
  • Low on-resistance of 35mΩ maximum.
  • AEC Q101 qualified for automotive.

IPG20N06S2L35ATMA1 Applications

  • Used in automotive power distribution.
  • Ideal for DC-DC converter designs.
  • Suitable for motor drive circuits.
  • Perfect for load switching applications.

IPG20N06S2L35ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage?

55V minimum.

What is the continuous drain current rating?

20A at Tc=25°C.

What is the on-resistance?

35mΩ maximum at Vgs=10V, Id=15A.

What is the operating temperature range?

-55°C to 175°C.

Is this device RoHS compliant?

Yes, RoHS3 compliant.

What package does it come in?

PG-TDSON-8 (8-PowerVDFN).

Is it logic level gate?

Yes, gate threshold voltage 1.2-2.0V.

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