| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11,020 pcs
|
11020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Reverse Recovery Time | |
| Storage Temperature | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The IPG20N06S2L35ATMA1 is a dual N-channel logic level MOSFET from Infineon's OptiMOS series. It is designed for automotive and industrial applications requiring high efficiency and compact design. The device integrates two independent MOSFETs in a single PG-TDSON-8 package, saving board space. Key electrical characteristics include a drain-source breakdown voltage of 55V, continuous drain current of 20A at 25°C case temperature, and a maximum on-resistance of 35mΩ at Vgs=10V. The logic level gate threshold allows direct drive from 3.3V or 5V microcontrollers. The MOSFET is AEC Q101 qualified and RoHS compliant, with an operating temperature range of -55°C to 175°C. The package offers low thermal resistance (2.3 K/W junction-to-case) and is suitable for surface mount assembly.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.22 | $2.22 |
| 10+ | $1.42 | $1.42 |
| 50+ | $1.07 | $1.07 |
| 100+ | $0.96 | $0.96 |
| 500+ | $0.76 | $0.76 |
| 5,000+ | $0.59 | $0.59 |
| 15,000+ | $0.55 | $0.55 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
55V minimum.
20A at Tc=25°C.
35mΩ maximum at Vgs=10V, Id=15A.
-55°C to 175°C.
Yes, RoHS3 compliant.
PG-TDSON-8 (8-PowerVDFN).
Yes, gate threshold voltage 1.2-2.0V.