| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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11,213 pcs
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11213 pcs | On Request | 1 | On Request | On Request | 21+ | On Request | On Request | |
|
1,530 pcs
|
1530 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPG20N06S2L-65A is a dual N-channel logic-level enhancement mode MOSFET designed for automotive applications. It boasts a drain-source breakdown voltage of 55V and can handle a continuous drain current of up to 20A at 25°C case temperature.
Key electrical characteristics include a maximum on-state resistance of 65mΩ at VGS=10V and ID=15A, and a typical gate threshold voltage of 1.6V. The device is AEC Q101 qualified and operates at temperatures ranging from -55°C to +175°C.
Packaged in a PG-TDSON-8 surface-mount package, this MOSFET is suitable for applications such as solenoid control and LED lighting. It also features 100% avalanche tested and is feasible for automatic optical inspection (AOI).
Environmental compliance includes RoHS3 compliance and an MSL1 rating, allowing for reflow soldering up to 260°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 20A at 25°C case temperature and 14A at 100°C case temperature.
The drain-source breakdown voltage is 55V.
The typical gate threshold voltage is 1.6V.
The maximum on-state resistance is 79mΩ at VGS=4.5V, ID=7.5A, and 65mΩ at VGS=10V, ID=15A.
The operating and storage temperature range is -55°C to +175°C.
The IPG20N06S2L-65A is in a PG-TDSON-8 package.
Yes, the IPG20N06S2L-65A is AEC Q101 qualified.