| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1,236 pcs
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1236 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Infineon IPG20N06S2L-65 is a high-performance OptiMOS® power transistor designed for automotive applications. This dual N-channel MOSFET features enhancement mode operation and logic-level gate drive capability.
Key electrical characteristics include a drain-source breakdown voltage of 55V and a continuous drain current of 20A at 25°C case temperature. The device exhibits low on-state resistance, with typical values of 65mW at VGS=10V and ID=15A. Dynamic characteristics such as input capacitance, output capacitance, and reverse transfer capacitance are also specified, along with switching times like turn-on delay, rise time, turn-off delay, and fall time.
This MOSFET is AEC Q101 qualified and operates at temperatures up to 175°C. It is supplied in a PG-TDSON-8 package, suitable for surface mounting. The device is also RoHS compliant and rated MSL1 up to 260°C peak reflow.
With its robust features and automotive qualification, the IPG20N06S2L-65 is well-suited for various power management applications in vehicles.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.40 | $2.40 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 55V.
The typical gate threshold voltage is 1.6V.
The maximum continuous drain current is 20A at 25°C case temperature.
The typical drain-source on-state resistance at VGS=10V and ID=15A is 53mW.
The operating and storage temperature range is -55°C to +175°C.
The IPG20N06S2L-65 is supplied in a PG-TDSON-8 package.
Yes, the IPG20N06S2L-65 is AEC Q101 qualified.