| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,695 pcs
|
3695 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| AEC Qualified | |
| Automotive Grade | |
| Industrial Grade | |
| Medical Grade | |
| Military Grade | |
| Storage Temperature | |
| Tape & Reel |
The Infineon Technologies IPG20N06S2L-35A is a dual N-channel, logic-level enhancement mode MOSFET. It is AEC Q101 qualified and suitable for applications requiring high performance and reliability.
Key electrical characteristics include a drain-source breakdown voltage of 55V and a continuous drain current of 20A at 25°C case temperature. The on-state resistance is as low as 35mΩ at VGS=4.5V and ID=10A. The device operates over a wide temperature range from -55°C to +175°C.
Packaged in a PG-TDSON-8 surface-mount package, this MOSFET is designed for efficient thermal management with a junction-to-case thermal resistance of 2.3 K/W. It is also 100% avalanche tested and feasible for automatic optical inspection (AOI).
This OptiMOS® power transistor is suitable for automotive control and LED lighting applications, offering robust performance and compliance with industry standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.67 | $1.67 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 55V.
The typical gate threshold voltage is 1.6V.
The maximum continuous drain current is 20A.
The maximum on-state resistance at VGS=4.5V and ID=10A is 44mΩ.
The operating temperature range is -55°C to +175°C.
It is supplied in the PG-TDSON-8 package.