IPG20N06S2L-35A The Infineon Technologies IPG20N06S2L-35A is a dual N-channel MOSFET designed for automotive control and LED lighting applications. It offers a 55V drain-source breakdown voltage and a continuous drain current of 20A.
Mfr Part #:

IPG20N06S2L-35A

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
The Infineon Technologies IPG20N06S2L-35A is a dual N-channel MOSFET designed for automotive control and LED lighting applications. It offers a 55V drain-source breakdown voltage and a continuous drain current of 20A.
✓ Total Stock: 3,695 pcs
$ Price Range: $1.67

IPG20N06S2L-35A Available from 1 distributor

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✓ Non-Authorised
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IPG20N06S2L-35A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Industrial Grade
Medical Grade
Military Grade
Storage Temperature
Tape & Reel

IPG20N06S2L-35A Description

Short technical summary and product information.

The Infineon Technologies IPG20N06S2L-35A is a dual N-channel, logic-level enhancement mode MOSFET. It is AEC Q101 qualified and suitable for applications requiring high performance and reliability.

 

Key electrical characteristics include a drain-source breakdown voltage of 55V and a continuous drain current of 20A at 25°C case temperature. The on-state resistance is as low as 35mΩ at VGS=4.5V and ID=10A. The device operates over a wide temperature range from -55°C to +175°C.

 

Packaged in a PG-TDSON-8 surface-mount package, this MOSFET is designed for efficient thermal management with a junction-to-case thermal resistance of 2.3 K/W. It is also 100% avalanche tested and feasible for automatic optical inspection (AOI).

 

This OptiMOS® power transistor is suitable for automotive control and LED lighting applications, offering robust performance and compliance with industry standards.

IPG20N06S2L-35A Quick Information

Product Type: MOSFET
Canonical Name: IPG20N06S2L-35A OptiMOS® Power-Transistor
Subcategory: Power MOSFET

IPG20N06S2L-35A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

IPG20N06S2L-35A Estimated Pricing

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1+ $1.67 $1.67

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPG20N06S2L-35A Features

  • Dual N-channel logic level enhancement mode MOSFET.
  • AEC Q101 qualified for automotive use.
  • 55V drain-source breakdown voltage.
  • 20A continuous drain current.
  • Low on-state resistance down to 35mΩ.

IPG20N06S2L-35A Applications

  • Automotive control systems.
  • LED lighting applications.
  • Power management circuits.
  • General purpose switching.

IPG20N06S2L-35A FAQs

6 frequently asked questions generated from this part’s specifications.
What is the drain-source breakdown voltage of the IPG20N06S2L-35A?

The drain-source breakdown voltage is 55V.

What is the typical gate threshold voltage for this MOSFET?

The typical gate threshold voltage is 1.6V.

What is the maximum continuous drain current?

The maximum continuous drain current is 20A.

What is the maximum on-state resistance at VGS=4.5V?

The maximum on-state resistance at VGS=4.5V and ID=10A is 44mΩ.

What is the operating temperature range?

The operating temperature range is -55°C to +175°C.

What package type is the IPG20N06S2L-35A supplied in?

It is supplied in the PG-TDSON-8 package.

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