IPG20N04S412ATMA1 Dual N-channel MOSFET from Infineon, rated for 40V drain-source voltage and 20A continuous drain current. Features low on-resistance of 12.2mΩ max and operates up to 175°C junction temperature.
Mfr Part #:

IPG20N04S412ATMA1

Available from 1 distributors
Mfr Name: Infineon Technologies
Infineon Technologies
Dual N-channel MOSFET from Infineon, rated for 40V drain-source voltage and 20A continuous drain current. Features low on-resistance of 12.2mΩ max and operates up to 175°C junction temperature.
✓ Total Stock: 146,020 pcs
$ Price Range: $0.43 - $1.85

IPG20N04S412ATMA1 Available from 1 distributor

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✓ Non-Authorised
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146,020 pcs
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IPG20N04S412ATMA1 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
AEC Qualified
Automotive Grade
Configuration
Current
Drain to Source Voltage (Vdss)
Gate Charge (Qg) (Max) @ Vgs
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
Reverse Recovery Time (trr)
SVHC Present
Supplier Device Package
Technology
Termination Style
Vgs(th) (Max) @ Id

IPG20N04S412ATMA1 Description

Short technical summary and product information.

The Infineon IPG20N04S412ATMA1 is a dual N-channel enhancement mode MOSFET in a PG-TDSON-8 surface mount package. It is part of the OptiMOS-T2 family and is AEC Q101 qualified for automotive applications.

 

Each channel is rated for a drain-source voltage of 40V and a continuous drain current of 20A at 25°C case temperature. The typical on-resistance is 11.1mΩ with a maximum of 12.2mΩ at VGS=10V and ID=17A. Gate threshold voltage ranges from 2.0V to 4.0V. The device can handle pulsed drain currents up to 80A and single-pulse avalanche energy of 80mJ.

 

Switching speeds are characterized with typical turn-on delay of 9ns, rise time of 2ns, turn-off delay of 10ns, and fall time of 8ns. Total gate charge is 14nC typical. Thermal resistance junction-to-case is 3.7 K/W, and junction-to-ambient is 100 K/W with minimal footprint or 60 K/W with 6cm² cooling area. Operating junction temperature range is -55°C to 175°C.

 

The device is housed in a PG-TDSON-8 package (8-pin PowerVDFN) and is RoHS compliant (Green Product). It is MSL1 rated up to 260°C peak reflow temperature. The part is 100% avalanche tested.

IPG20N04S412ATMA1 Quick Information

Product Type: MOSFET Array
Series: OptiMOS-T2
Canonical Name: Infineon IPG20N04S412ATMA1 Dual N-Channel MOSFET
Subcategory: Dual N-Channel

IPG20N04S412ATMA1 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): MSL 1 - Unlimited (260°C peak reflow)
REACH Status: REACH Unaffected
Lead Free: Yes

IPG20N04S412ATMA1 Estimated Pricing

Qty Low High
1+ $1.85 $1.85
10+ $1.18 $1.18
50+ $0.88 $0.88
100+ $0.79 $0.79
500+ $0.62 $0.62
5,000+ $0.48 $0.48
15,000+ $0.43 $0.43

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPG20N04S412ATMA1 Features

  • Dual N-channel enhancement mode MOSFET.
  • Rated for 40V drain-source voltage and 20A current.
  • Low on-resistance of 12.2mΩ maximum.
  • AEC Q101 qualified for automotive applications.
  • RoHS compliant and MSL1 rated.

IPG20N04S412ATMA1 Applications

  • Suitable for automotive power management systems.
  • Used in DC-DC converters and motor control.
  • Ideal for high-frequency switching applications.
  • Can be used in battery protection circuits.

IPG20N04S412ATMA1 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating?

40V.

What package is the IPG20N04S412ATMA1 available in?

PG-TDSON-8 (8-pin PowerVDFN) surface mount package.

What is the operating temperature range?

-55°C to 175°C junction temperature.

Is the IPG20N04S412ATMA1 RoHS compliant?

Yes, it is RoHS compliant (Green Product).

What is the continuous drain current rating?

20A at 25°C case temperature, one channel active.

What is the typical on-resistance?

11.1mΩ typical, 12.2mΩ maximum at VGS=10V, ID=17A.

What is the gate threshold voltage?

2.0V minimum, 3.0V typical, 4.0V maximum at ID=15µA.

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